IRL530N

IRL530N. C(in): 800pF. Cost): 160pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 140 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 79W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 30 ns. Td(on): 7.2 ns. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 16V. Vgs(th) max.: 2V. Vgs(th) min.: 1V. Technology: HEXFET Power MOSFET transistor, logic level controlled. Spec info: Gate control by logic level. G-S Protection: no. Quantity in stock updated on 24/12/2024, 18:25.