Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.02$ | 1.02$ |
5 - 9 | 0.97$ | 0.97$ |
10 - 24 | 0.92$ | 0.92$ |
25 - 49 | 0.87$ | 0.87$ |
50 - 99 | 0.85$ | 0.85$ |
100 - 190 | 0.82$ | 0.82$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.02$ | 1.02$ |
5 - 9 | 0.97$ | 0.97$ |
10 - 24 | 0.92$ | 0.92$ |
25 - 49 | 0.87$ | 0.87$ |
50 - 99 | 0.85$ | 0.85$ |
100 - 190 | 0.82$ | 0.82$ |
IRF530. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.
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