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Electronic components and equipment, for businesses and individuals

IRF530

IRF530
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.02$ 1.02$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 99 0.85$ 0.85$
100 - 190 0.82$ 0.82$
Quantity U.P
1 - 4 1.02$ 1.02$
5 - 9 0.97$ 0.97$
10 - 24 0.92$ 0.92$
25 - 49 0.87$ 0.87$
50 - 99 0.85$ 0.85$
100 - 190 0.82$ 0.82$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 190
Set of 1

IRF530. C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 56A. ID (T=100°C): 10A. ID (T=25°C): 14A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 88W. On-resistance Rds On: 0.16 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 10 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 120
IRF530N

IRF530N

C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drai...
IRF530N
C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no
IRF530N
C(in): 920pF. Cost): 130pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 93 ns. Type of transistor: MOSFET. Function: N MOSFET transistor. Id(imp): 60A. ID (T=100°C): 12A. ID (T=25°C): 17A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. On-resistance Rds On: 0.09 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 35 ns. Td(on): 9.2 ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no
Set of 1
1.73$ VAT incl.
(1.73$ excl. VAT)
1.73$

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Quantity in stock : 190
IRF530

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C(in): 670pF. Cost): 250pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Quan...
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IRF9530N

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2SA1837

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2SC4793

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Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
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Quantity in stock : 128
IRF9530

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C(in): 860pF. Cost): 340pF. Channel type: P. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Fu...
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Quantity in stock : 175
IRF3205

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C(in): 3247pF. Cost): 781pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of...
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IRF520

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C(in): 360pF. Cost): 150pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. ...
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Quantity in stock : 231
IRF9540N

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C(in): 1300pF. Cost): 400pF. Channel type: P. Trr Diode (Min.): 150 ns. Type of transistor: MOSFET. ...
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