Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.05$ | 2.05$ |
5 - 9 | 1.95$ | 1.95$ |
10 - 24 | 1.85$ | 1.85$ |
25 - 34 | 1.75$ | 1.75$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.05$ | 2.05$ |
5 - 9 | 1.95$ | 1.95$ |
10 - 24 | 1.85$ | 1.85$ |
25 - 34 | 1.75$ | 1.75$ |
2SC4793. Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max hFE gain: 320. Minimum hFE gain: 100. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): 2-10R1A. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1837. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 14:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.