IRF510

Quantity	excl. VAT	VAT incl.
1 - 4	1.11$	1.11$
5 - 9	1.05$	1.05$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 99	0.92$	0.92$
100 - 178	0.90$	0.90$

Quantity	U.P
1 - 4	1.11$	1.11$
5 - 9	1.05$	1.05$
10 - 24	1.00$	1.00$
25 - 49	0.94$	0.94$
50 - 99	0.92$	0.92$
100 - 178	0.90$	0.90$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 178

Set of 1

IRF510. C(in): 180pF. Cost): 81pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: MOSFET. Id(imp): 20A. ID (T=100°C): 4A. ID (T=25°C): 5.6A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 43W. On-resistance Rds On: 0.54 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 6.9ns. Technology: HEXFET Power MOSFET. Housing: TO-220. Housing (according to data sheet): TO-220AB. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

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Delivery in 2-3 days, with postal tracking!