Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.39$ | 1.39$ |
5 - 9 | 1.32$ | 1.32$ |
10 - 24 | 1.25$ | 1.25$ |
25 - 49 | 1.18$ | 1.18$ |
50 - 99 | 1.16$ | 1.16$ |
100 - 213 | 1.13$ | 1.13$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.39$ | 1.39$ |
5 - 9 | 1.32$ | 1.32$ |
10 - 24 | 1.25$ | 1.25$ |
25 - 49 | 1.18$ | 1.18$ |
50 - 99 | 1.16$ | 1.16$ |
100 - 213 | 1.13$ | 1.13$ |
2N2904. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 20. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Tf(max): 200 ns. Tf(min): 175 ns. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 40V. Quantity in stock updated on 23/12/2024, 16:25.
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