Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.66$ | 0.66$ |
2 - 2 | 0.63$ | 0.63$ |
3 - 4 | 0.60$ | 0.60$ |
5 - 9 | 0.56$ | 0.56$ |
10 - 24 | 0.53$ | 0.53$ |
25 - 49 | 0.50$ | 0.50$ |
50 - 197 | 0.46$ | 0.46$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.66$ | 0.66$ |
2 - 2 | 0.63$ | 0.63$ |
3 - 4 | 0.60$ | 0.60$ |
5 - 9 | 0.56$ | 0.56$ |
10 - 24 | 0.53$ | 0.53$ |
25 - 49 | 0.50$ | 0.50$ |
50 - 197 | 0.46$ | 0.46$ |
BC212B. Housing: TO-92. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 03/04/2025, 13:25.
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