2N2905A

Quantity	excl. VAT	VAT incl.
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 160	0.74$	0.74$

Quantity	U.P
1 - 4	0.91$	0.91$
5 - 9	0.87$	0.87$
10 - 24	0.82$	0.82$
25 - 49	0.78$	0.78$
50 - 99	0.76$	0.76$
100 - 160	0.74$	0.74$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 160

Set of 1

2N2905A. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: amplifier, switching transistor. Max hFE gain: 300. Minimum hFE gain: 75. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. Quantity in stock updated on 23/12/2024, 16:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!