Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.62$ | 0.62$ |
10 - 24 | 0.59$ | 0.59$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 66 | 0.53$ | 0.53$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.62$ | 0.62$ |
10 - 24 | 0.59$ | 0.59$ |
25 - 49 | 0.56$ | 0.56$ |
50 - 66 | 0.53$ | 0.53$ |
2N2904A. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.6A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity in stock updated on 23/12/2024, 15:25.
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