Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.21$ | 0.21$ |
10 - 24 | 0.20$ | 0.20$ |
25 - 49 | 0.18$ | 0.18$ |
50 - 99 | 0.17$ | 0.17$ |
100 - 249 | 0.16$ | 0.16$ |
250 - 308 | 0.15$ | 0.15$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.21$ | 0.21$ |
10 - 24 | 0.20$ | 0.20$ |
25 - 49 | 0.18$ | 0.18$ |
50 - 99 | 0.17$ | 0.17$ |
100 - 249 | 0.16$ | 0.16$ |
250 - 308 | 0.15$ | 0.15$ |
BC182B. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Quantity in stock updated on 23/12/2024, 19:25.
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