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BC182B

BC182B
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Quantity excl. VAT VAT incl.
1 - 9 0.21$ 0.21$
10 - 24 0.20$ 0.20$
25 - 49 0.18$ 0.18$
50 - 99 0.17$ 0.17$
100 - 249 0.16$ 0.16$
250 - 308 0.15$ 0.15$
Quantity U.P
1 - 9 0.21$ 0.21$
10 - 24 0.20$ 0.20$
25 - 49 0.18$ 0.18$
50 - 99 0.17$ 0.17$
100 - 249 0.16$ 0.16$
250 - 308 0.15$ 0.15$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 308
Set of 1

BC182B. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 500. Minimum hFE gain: 240. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Quantity in stock updated on 23/12/2024, 19:25.

Equivalent products :

Quantity in stock : 17819
BC546B

BC546B

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
BC546B
RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
Set of 1
0.06$ VAT incl.
(0.06$ excl. VAT)
0.06$
Quantity in stock : 7951
2N3904

2N3904

C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: si...
2N3904
C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no
2N3904
C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 40V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no
Set of 10
0.57$ VAT incl.
(0.57$ excl. VAT)
0.57$
Quantity in stock : 240
BC637

BC637

C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collect...
BC637
C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collector current: 1A. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
BC637
C(in): 50pF. Cost): 7pF. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Collector current: 1A. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no
Set of 10
1.41$ VAT incl.
(1.41$ excl. VAT)
1.41$
Quantity in stock : 12908
BC546A

BC546A

Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE...
BC546A
Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556A. BE diode: no. CE diode: no
BC546A
Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556A. BE diode: no. CE diode: no
Set of 10
0.60$ VAT incl.
(0.60$ excl. VAT)
0.60$

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BC546B

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RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
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CCER470PF100V

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Capacitance: 470nF. Diameter: 6mm. Capacitor material: ceramic. Pitch: 5mm. DC voltage: 100V. RoHS: ...
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