Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.67$ | 0.67$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 70 | 0.60$ | 0.60$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.70$ | 0.70$ |
10 - 24 | 0.67$ | 0.67$ |
25 - 49 | 0.63$ | 0.63$ |
50 - 70 | 0.60$ | 0.60$ |
BCY59. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 1000. Minimum hFE gain: 40. Collector current: 100mA. Ic(pulse): 200A. Pd (Power Dissipation, Max): 0.34W. Assembly/installation: PCB through-hole mounting. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.75V. Collector/emitter voltage Vceo: 45V. Quantity in stock updated on 23/12/2024, 19:25.
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