IRFP260N

Quantity	excl. VAT	VAT incl.
1 - 4	5.09$	5.09$
5 - 9	4.83$	4.83$
10 - 24	4.58$	4.58$
25 - 49	4.32$	4.32$
50 - 99	4.22$	4.22$
100 - 133	3.72$	3.72$

Quantity	U.P
1 - 4	5.09$	5.09$
5 - 9	4.83$	4.83$
10 - 24	4.58$	4.58$
25 - 49	4.32$	4.32$
50 - 99	4.22$	4.22$
100 - 133	3.72$	3.72$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 133

Set of 1

IRFP260N. C(in): 4057pF. Cost): 603pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 268 ns. Type of transistor: MOSFET. Function: dynamic dv/dt ratio, fast switching. Id(imp): 200A. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss (max): 250uA. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 300W. On-resistance Rds On: 0.04 Ohms. RoHS: yes. Weight: 5.57g. Assembly/installation: PCB through-hole mounting. Td(off): 55 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 200V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 24/12/2024, 14:25.

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Delivery in 2-3 days, with postal tracking!