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IRFP140N

IRFP140N
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Quantity excl. VAT VAT incl.
1 - 4 2.48$ 2.48$
5 - 9 2.36$ 2.36$
10 - 24 2.23$ 2.23$
Quantity U.P
1 - 4 2.48$ 2.48$
5 - 9 2.36$ 2.36$
10 - 24 2.23$ 2.23$
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Quantity in stock : 24
Set of 1

IRFP140N. Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=100°C): 16A. ID (T=25°C): 33A. Idss (max): 250uA. IDss (min): 25uA. Pd (Power Dissipation, Max): 140W. On-resistance Rds On: 0.052 Ohms. Assembly/installation: PCB through-hole mounting. Td(off): 44 ns. Td(on): 8.2 ns. Technology: HEXFET. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 100V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

Equivalent products :

Quantity in stock : 27
IRFP140A

IRFP140A

Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=25°...
IRFP140A
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=25°C): 31A. Idss (max): 31A. Pd (Power Dissipation, Max): 131W. On-resistance Rds On: 0.51 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 100V
IRFP140A
Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=25°C): 31A. Idss (max): 31A. Pd (Power Dissipation, Max): 131W. On-resistance Rds On: 0.51 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 100V
Set of 1
2.79$ VAT incl.
(2.79$ excl. VAT)
2.79$
Quantity in stock : 82
IRFP140

IRFP140

C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type o...
IRFP140
C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.077 Ohms. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
IRFP140
C(in): 1700pF. Cost): 550pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 180 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 60.4k Ohms. ID (T=100°C): 22A. ID (T=25°C): 31A. Idss (max): 250uA. IDss (min): 25uA. Note: complementary transistor (pair) IRFP9140. Pd (Power Dissipation, Max): 180W. On-resistance Rds On: 0.077 Ohms. RoHS: yes. Td(off): 53 ns. Td(on): 11 ns. Technology: HEXFET Power MOSFET. Power: 180W. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Drain-source protection : yes. G-S Protection: no
Set of 1
2.72$ VAT incl.
(2.72$ excl. VAT)
2.72$

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Quantity in stock : 27
IRFP9140N

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C(in): 1300pF. Cost): 400pF. Channel type: P. Quantity per case: 1. Trr Diode (Min.): 150 ns. Type o...
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Quantity in stock : 24
IRFP140N

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Channel type: N. Quantity per case: 1. Type of transistor: MOSFET. Function: PowerMOSFET. ID (T=100Â...
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IRFP9240

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IRFP150

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C(in): 2800pF. Cost): 1100pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qu...
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IRFP240

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C(in): 1300pF. Cost): 400pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 25. Qua...
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2SA1943

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FUSE10-000A20T

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Max Continuous current: 10A. Fuse type: Glass (Cylindrical). Fuse properties: time delay fuse (T)....
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FDP3652

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IRFP150N

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C(in): 1900pF. Cost): 450pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Dra...
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Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
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