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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V - IRFP048NPBF

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V - IRFP048NPBF
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.73$ 2.73$
5 - 9 2.60$ 2.60$
10 - 24 2.46$ 2.46$
25 - 49 2.32$ 2.32$
50 - 83 2.27$ 2.27$
Quantity U.P
1 - 4 2.73$ 2.73$
5 - 9 2.60$ 2.60$
10 - 24 2.46$ 2.46$
25 - 49 2.32$ 2.32$
50 - 83 2.27$ 2.27$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 83
Set of 1

N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V - IRFP048NPBF. N-channel transistor, 45A, 64A, 250uA, 0.016 Ohms, TO-247, TO-247AC, 55V. ID (T=100°C): 45A. ID (T=25°C): 64A. Idss (max): 250uA. On-resistance Rds On: 0.016 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 55V. C(in): 1900pF. Cost): 620pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 94 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 210A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 140W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 32 ns. Td(on): 11 ns. Technology: HEXFET ® Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 21/04/2025, 01:25.

Technical documentation

Equivalent products :

Quantity in stock : 19
IRFP048

IRFP048

N-channel transistor, 52A, 70A, 250uA, 0.018 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 52A. ID (T=...
IRFP048
N-channel transistor, 52A, 70A, 250uA, 0.018 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 2400pF. Cost): 1300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: PowerMOSFET. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
IRFP048
N-channel transistor, 52A, 70A, 250uA, 0.018 Ohms, TO-247, TO-247AC, 60V. ID (T=100°C): 52A. ID (T=25°C): 70A. Idss (max): 250uA. On-resistance Rds On: 0.018 Ohms. Housing: TO-247. Housing (according to data sheet): TO-247AC. Voltage Vds(max): 60V. C(in): 2400pF. Cost): 1300pF. Channel type: N. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 120ns. Type of transistor: MOSFET. Function: PowerMOSFET. Id(imp): 290A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 190W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 210 ns. Td(on): 8.1 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. G-S Protection: no
Set of 1
5.25$ VAT incl.
(5.25$ excl. VAT)
5.25$

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