N-channel transistor, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V - IRF8010S

N-channel transistor, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V - IRF8010S. N-channel transistor, 57A, 80A, 250uA, 12m Ohms, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 100V. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. On-resistance Rds On: 12m Ohms. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 100V. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. G-S Protection: no. Id(imp): 320A. IDss (min): 20uA. Number of terminals: 2. Pd (Power Dissipation, Max): 260W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 23/05/2025, 03:25.