IRF8010S

Quantity	excl. VAT	VAT incl.
1 - 4	2.66$	2.66$
5 - 9	2.53$	2.53$
10 - 24	2.40$	2.40$
25 - 49	2.27$	2.27$
50 - 99	2.21$	2.21$
100 - 129	2.16$	2.16$

Quantity	U.P
1 - 4	2.66$	2.66$
5 - 9	2.53$	2.53$
10 - 24	2.40$	2.40$
25 - 49	2.27$	2.27$
50 - 99	2.21$	2.21$
100 - 129	2.16$	2.16$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 129

Set of 1

IRF8010S. C(in): 3850pF. Cost): 480pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 99 ns. Type of transistor: MOSFET. Function: High frequency DC-DC converts. Id(imp): 320A. ID (T=100°C): 57A. ID (T=25°C): 80A. Idss (max): 250uA. IDss (min): 20uA. Pd (Power Dissipation, Max): 260W. On-resistance Rds On: 12m Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 61 ns. Td(on): 15 ns. Technology: HEXFET Power MOSFET. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Operating temperature: -55...+175°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. Conditioning unit: 50. G-S Protection: no. Quantity in stock updated on 25/12/2024, 14:25.

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Delivery in 2-3 days, with postal tracking!