IRF7413Z

Quantity	excl. VAT	VAT incl.
1 - 4	0.96$	0.96$
5 - 9	0.92$	0.92$
10 - 24	0.87$	0.87$
25 - 49	0.82$	0.82$
50 - 66	0.80$	0.80$

Quantity	U.P
1 - 4	0.96$	0.96$
5 - 9	0.92$	0.92$
10 - 24	0.87$	0.87$
25 - 49	0.82$	0.82$
50 - 66	0.80$	0.80$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 66

Set of 1

IRF7413Z. C(in): 1210pF. Cost): 270pF. Channel type: N. Conditioning: plastic tube. Drain-source protection : Zener diode. Trr Diode (Min.): 24 ns. Type of transistor: MOSFET. Function: Ultra-Low Gate Impedance. Id(imp): 100A. ID (T=100°C): 9.2A. ID (T=25°C): 13A. Idss (max): 150uA. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 11 ns. Td(on): 8.7 ns. Technology: HEXFET Power MOSFET. Housing: SO. Housing (according to data sheet): SO-8. Operating temperature: -55...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.25V. Vgs(th) min.: 1.35V. Quantity per case: 1. Conditioning unit: 95. On-resistance Rds On: 0.008 Ohms. G-S Protection: no. Quantity in stock updated on 12/01/2025, 16:25.

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Delivery in 2-3 days, with postal tracking!