Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 9.04$ | 9.04$ |
2 - 2 | 8.59$ | 8.59$ |
3 - 3 | 8.14$ | 8.14$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 9.04$ | 9.04$ |
2 - 2 | 8.59$ | 8.59$ |
3 - 3 | 8.14$ | 8.14$ |
HGTG20N60B3D. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 45 ns. Function: UFS Series IGBT with Anti-Parallel Hyperfast Diode. Collector current: 40A. Ic(pulse): 160A. Ic(T=100°C): 20A. Marking on the case: G20N60B3D. Number of terminals: 3. Pd (Power Dissipation, Max): 165W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 25 ns. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.5V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Spec info: Typical Fall Time 140ns at 150°C. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.
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