Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 5.81$ | 5.81$ |
2 - 2 | 5.52$ | 5.52$ |
3 - 4 | 5.22$ | 5.22$ |
5 - 9 | 4.93$ | 4.93$ |
10 - 19 | 4.82$ | 4.82$ |
20 - 29 | 4.70$ | 4.70$ |
30 - 90 | 4.53$ | 4.53$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 5.81$ | 5.81$ |
2 - 2 | 5.52$ | 5.52$ |
3 - 4 | 5.22$ | 5.22$ |
5 - 9 | 4.93$ | 4.93$ |
10 - 19 | 4.82$ | 4.82$ |
20 - 29 | 4.70$ | 4.70$ |
30 - 90 | 4.53$ | 4.53$ |
HGTG5N120BND. Channel type: N. Collector current: 25A. Ic(pulse): 40A. Ic(T=100°C): 10A. Marking on the case: 5N120BND. Number of terminals: 3. Pd (Power Dissipation, Max): 167W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 182 ns. Td(on): 20 ns. Technology: NPT series IGBT transistor with anti-parallel hyperfast diode. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.45V. Maximum saturation voltage VCE(sat): 3.7V. Collector/emitter voltage Vceo: 1200V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 6V. Gate/emitter voltage VGE(th)max.: 6.8V. CE diode: yes. Germanium diode: no. Quantity in stock updated on 12/01/2025, 02:25.
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