Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 10.14$ | 10.14$ |
2 - 2 | 9.63$ | 9.63$ |
3 - 4 | 9.43$ | 9.43$ |
5 - 9 | 9.13$ | 9.13$ |
10 - 17 | 8.92$ | 8.92$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 10.14$ | 10.14$ |
2 - 2 | 9.63$ | 9.63$ |
3 - 4 | 9.43$ | 9.43$ |
5 - 9 | 9.13$ | 9.13$ |
10 - 17 | 8.92$ | 8.92$ |
IGBT transistor HGTG20N60A4D. IGBT transistor. RoHS: yes. Housing: TO-247. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. CE diode: yes. Channel type: N. Conditioning: plastic tube. Conditioning unit: 30. Trr Diode (Min.): 35 ns. Function: SMPS Series IGBT with Anti-Parallel Hyperfast. Germanium diode: no. Collector current: 70A. Ic(pulse): 280A. Ic(T=100°C): 40A. Marking on the case: 20N60A4D. Number of terminals: 3. Pd (Power Dissipation, Max): 290W. Assembly/installation: PCB through-hole mounting. Td(off): 73 ns. Td(on): 15 ns. Original product from manufacturer Onsemi. Quantity in stock updated on 12/08/2025, 14:08.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.