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Electronic components and equipment, for businesses and individuals

Product categories :

Semiconductors Transistors

HGTG20N60A4D

Quantity	excl. VAT	VAT incl.
1 - 1	10.14$	10.14$
2 - 2	9.63$	9.63$
3 - 4	9.13$	9.13$
5 - 9	8.62$	8.62$
10 - 14	8.42$	8.42$
15 - 19	8.22$	8.22$
20 - 155	7.91$	7.91$

Quantity	U.P
1 - 1	10.14$	10.14$
2 - 2	9.63$	9.63$
3 - 4	9.13$	9.13$
5 - 9	8.62$	8.62$
10 - 14	8.42$	8.42$
15 - 19	8.22$	8.22$
20 - 155	7.91$	7.91$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 155

Set of 1

HGTG20N60A4D. RoHS: yes. Component family: IGBT transistor with built-in high-speed free-wheeling diode. Housing: PCB soldering. Housing: TO-247. Housing (JEDEC standard): 35 ns. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 20N60A4D. Collector-emitter voltage Uce [V]: 600V. Collector current Ic [A]: 70A. Switch-on time ton [nsec.]: 15 ns. Switch-off delay tf[nsec.]: 73 ns. Gate breakdown voltage Ugs [V]: 7V. Maximum dissipation Ptot [W]: 290W. Housing (according to data sheet): TO-247AC. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 1.8V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 4.5V. Gate/emitter voltage VGE(th)max.: 7V. Maximum collector current (A): 280A. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

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