Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 400 MHz. Function: general purpose. Max hFE gain: 120. Minimum hFE gain: 25. Collector current: 250mA. Marking on the case: B2. Number of terminals: 3. Pd (Power Dissipation, Max): 0.225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 18 ns. Tf(min): 12us. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 12V. Spec info: screen printing/SMD code B2

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Collector current: 1A. Pd (Power Dissipation, Max): 5W. Type of transistor: NPN. Collector/emitter voltage Vceo: 120V. Spec info: TO39

Type of transistor: MOSFET power transistor. Channel type: N. Max drain current: 7A. Power: 50W. On-resistance Rds On: 0.10 Ohms. Housing: TO-220. Control: Logic-Level. Drain-source voltage (Vds): 60V

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BTS132. Drain-source voltage Uds [V]: 60V. Drain Current Id [A] @ 25°C: 24A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.055 Ohms @ 12A. Gate breakdown voltage Ugs [V]: 2.5V. Switch-on time ton [nsec.]: 40 ns. Switch-off delay tf[nsec.]: 250 ns. Ciss Gate Capacitance [pF]: 1400pF. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: PCB soldering (SMD). Housing: SO8. Configuration: surface-mounted component (SMD). Number of terminals: 8. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 0.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.9 Ohms @ 0.2A. Switch-on time ton [nsec.]: 38us. Switch-off delay tf[nsec.]: 45us. Maximum dissipation Ptot [W]: 0.78W. Component family: low-side MOSFET. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 0.6A. Drain current through resistor Rds [Ohm] @ Ids [A]: 1.9 Ohms @ 0.2A. Switch-on time ton [nsec.]: 38us. Switch-off delay tf[nsec.]: 45us. Maximum dissipation Ptot [W]: 0.78W. Component family: low-side MOSFET. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: TO-263/5. Configuration: surface-mounted component (SMD). Number of terminals: 5. Manufacturer's marking: BTS410E2. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 5A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.22 Ohms @ 1.6A. Gate breakdown voltage Ugs [V]: 2.4V. Switch-on time ton [nsec.]: 125us. Switch-off delay tf[nsec.]: 85us. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: SOT-223. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS4141N. Drain-source voltage Uds [V]: 45V. Drain Current Id [A] @ 25°C: 1.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 0.5A. Switch-on time ton [nsec.]: 100us. Switch-off delay tf[nsec.]: 150us. Maximum dissipation Ptot [W]: 1.4W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Manufacturer's marking: BTS432E2. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Switch-on time ton [nsec.]: 300us. Switch-off delay tf[nsec.]: 80us. Maximum dissipation Ptot [W]: 125W. Component family: MOSFET, N-MOS. Housing: PCB soldering. Housing: TO-220/5. Configuration: PCB through-hole mounting. Number of terminals: 5. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK/5. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS432E2-SMD. Drain-source voltage Uds [V]: 42V. Drain Current Id [A] @ 25°C: 11A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.038 Ohms @ 2A. Switch-on time ton [nsec.]: 300us. Switch-off delay tf[nsec.]: 80us. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK/5. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Drain-source voltage Uds [V]: 41V. Drain Current Id [A] @ 25°C: 9.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.072 Ohm @ 2A. Switch-on time ton [nsec.]: 200us. Switch-off delay tf[nsec.]: 250us. Maximum dissipation Ptot [W]: 75W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: S50010E. Drain-source voltage Uds [V]: 18V. Drain Current Id [A] @ 25°C: 40A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.002 Ohm @ 40A. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: P-DSO-12. Configuration: surface-mounted component (SMD). Number of terminals: 12. Manufacturer's marking: BTS5210L. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 2.4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.14 Ohms @ 2.4A. Switch-on time ton [nsec.]: 250us. Switch-off delay tf[nsec.]: 270us. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: P-DSO-12. Configuration: surface-mounted component (SMD). Number of terminals: 12. Manufacturer's marking: BTS5215L. Drain-source voltage Uds [V]: 40V. Drain Current Id [A] @ 25°C: 3.7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.09 Ohms @ 2A. Switch-on time ton [nsec.]: 250us. Switch-off delay tf[nsec.]: 270us. Maximum dissipation Ptot [W]: 3.1W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: no. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D²-PAK/7. Housing (JEDEC standard): TO-263. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS611L1. Drain-source voltage Uds [V]: 34V. Drain Current Id [A] @ 25°C: 4A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.2 Ohms @ 1.8A. Switch-on time ton [nsec.]: 400us. Switch-off delay tf[nsec.]: 400us. Maximum dissipation Ptot [W]: 36W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: D-PAK/5. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS6142D. Drain-source voltage Uds [V]: 38V. Drain Current Id [A] @ 25°C: 7A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.012 Ohms @ 7.5A. Switch-on time ton [nsec.]: 600us. Switch-off delay tf[nsec.]: 600us. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

RoHS: yes. Component family: MOSFET, N-MOS. Housing: PCB soldering (SMD). Housing: P-DSO-20. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BTS721L1. Drain-source voltage Uds [V]: 34V. Drain Current Id [A] @ 25°C: 2.9A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.01 Ohms @ 2A. Switch-on time ton [nsec.]: 400us. Switch-off delay tf[nsec.]: 400us. Maximum dissipation Ptot [W]: 3.7W. Operating temperature range min (°C): -40°C. Operating temperature range max (°C): +150°C

Function: 'Smart High-Side Power Switch'. Output: 2db N-MOS 43V 5.5A. Number of terminals: 20. On-resistance Rds On: 30 milliOhms. Assembly/installation: surface-mounted component (SMD). Housing: SO. Housing (according to data sheet): PG-DSO20. VCC: 5...34V

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 2.5A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Collector/emitter voltage Vceo: 1500V. CE diode: yes

Quantity per case: 1. Semiconductor material: silicon. Function: S-L TV-HA. Collector current: 7A. Pd (Power Dissipation, Max): 10W. Type of transistor: NPN. Vcbo: 130V. Collector/emitter voltage Vceo: 60V

Quantity per case: 1. Semiconductor material: silicon. FT: kHz. Max hFE gain: 7. Minimum hFE gain: 4. Collector current: 8A. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 35W. Assembly/installation: PCB through-hole mounting. Technology: Power Transistor. Tf(max): 0.6us. Tf(min): 0.4us. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 1500V. Saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 700V. Vebo: 13.5V

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 8A. Pd (Power Dissipation, Max): 60W. Type of transistor: NPN. Vcbo: 330V. Collector/emitter voltage Vceo: 150V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V

Quantity per case: 1. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. Function: TV-HA. Collector current: 12A. Pd (Power Dissipation, Max): 85W. Type of transistor: NPN. Vcbo: 700V. Collector/emitter voltage Vceo: 350V