Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 22 | 0.87$ | 0.87$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.96$ | 0.96$ |
5 - 9 | 0.92$ | 0.92$ |
10 - 22 | 0.87$ | 0.87$ |
BSR51. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 2000. Minimum hFE gain: 1000. Collector current: 1A. Ic(pulse): 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. Assembly/installation: PCB through-hole mounting. Tf(max): 1300 ns. Tf(min): 500 ns. Housing: TO-92. Housing (according to data sheet): TO-92 ( SOT-54 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. BE diode: no. CE diode: yes. Quantity in stock updated on 11/01/2025, 05:25.
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