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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123-ONS

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123-ONS
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.51$ 1.51$
2 - 2 1.43$ 1.43$
3 - 4 1.36$ 1.36$
5 - 9 1.28$ 1.28$
10 - 24 1.21$ 1.21$
25 - 49 1.13$ 1.13$
50 - 298 0.91$ 0.91$
Quantity (Set of 10) U.P
1 - 1 1.51$ 1.51$
2 - 2 1.43$ 1.43$
3 - 4 1.36$ 1.36$
5 - 9 1.28$ 1.28$
10 - 24 1.21$ 1.21$
25 - 49 1.13$ 1.13$
50 - 298 0.91$ 0.91$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2975
Set of 10

N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V - BSS123-ONS. N-channel transistor, 170mA, 46.4k Ohms, 6 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 170mA. Idss (max): 46.4k Ohms. On-resistance Rds On: 6 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 20pF. Cost): 9pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 680mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 20 ns. Technology: Field Effect Transistor Logic Level Enhancement Mode. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.6V. Vgs(th) min.: 1.6V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 17/04/2025, 14:25.

Equivalent products :

Quantity in stock : 100225
BSS123

BSS123

N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C...
BSS123
N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 150mA. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 23pF. Cost): 6pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 600mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123LT1G, BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no
BSS123
N-channel transistor, 150mA, 100uA, 3.5 Ohms, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 100V. ID (T=25°C): 150mA. Idss (max): 100uA. On-resistance Rds On: 3.5 Ohms. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 100V. C(in): 23pF. Cost): 6pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 11 ns. Type of transistor: MOSFET. Function: screen printing/SMD code SA. Id(imp): 600mA. IDss (min): 10uA. Marking on the case: SA. Equivalents: BSS123LT1G, BSS123-7-F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: N-channel TrenchMOS transistor Logic level FET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no
Set of 10
0.37$ VAT incl.
(0.37$ excl. VAT)
0.37$

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