BST82

BST82. C(in): 25pF. Cost): 8.5pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 30 ns. Type of transistor: MOSFET. Function: Very Fast Switching. Id(imp): 0.8A. ID (T=100°C): 0.12A. ID (T=25°C): 0.19A. Idss (max): 10uA. IDss (min): 0.01uA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. On-resistance Rds On: 5 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 12 ns. Td(on): 3 ns. Technology: 'enhancement mode field-effect transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -65...+150°C. Voltage Vds(max): 100V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Spec info: Logic level compatible. G-S Protection: no. Quantity in stock updated on 11/01/2025, 05:25.