Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.88$ | 0.88$ |
10 - 24 | 0.83$ | 0.83$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 99 | 0.77$ | 0.77$ |
100 - 172 | 0.75$ | 0.75$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 0.93$ | 0.93$ |
5 - 9 | 0.88$ | 0.88$ |
10 - 24 | 0.83$ | 0.83$ |
25 - 49 | 0.79$ | 0.79$ |
50 - 99 | 0.77$ | 0.77$ |
100 - 172 | 0.75$ | 0.75$ |
BSP100. C(in): 250pF. Cost): 88pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 69 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 24A. ID (T=100°C): 4.4A. ID (T=25°C): 6A. Idss (max): 100nA. IDss (min): 10nA. Number of terminals: 4. Pd (Power Dissipation, Max): 8.3W. On-resistance Rds On: 0.8 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 21 ns. Td(on): 6 ns. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Operating temperature: -65...+150°C. Voltage Vds(max): 30 v. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.8V. Vgs(th) min.: 1V. Technology: Enhancement mode, TrenchMOS transistor. G-S Protection: no. Quantity in stock updated on 10/01/2025, 16:25.
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