Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.38$ | 1.38$ |
5 - 9 | 1.31$ | 1.31$ |
10 - 24 | 1.24$ | 1.24$ |
25 - 49 | 1.17$ | 1.17$ |
50 - 99 | 1.15$ | 1.15$ |
100 - 249 | 1.10$ | 1.10$ |
250 - 2953 | 1.00$ | 1.00$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.38$ | 1.38$ |
5 - 9 | 1.31$ | 1.31$ |
10 - 24 | 1.24$ | 1.24$ |
25 - 49 | 1.17$ | 1.17$ |
50 - 99 | 1.15$ | 1.15$ |
100 - 249 | 1.10$ | 1.10$ |
250 - 2953 | 1.00$ | 1.00$ |
BS250P. C(in): 60pF. Channel type: P. Type of transistor: MOSFET. Id(imp): 3A. ID (T=25°C): 0.23A. Idss (max): 500nA. IDss (min): -0.23A. Pd (Power Dissipation, Max): 0.7W. On-resistance Rds On: 14 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 20 ns. Td(on): 20 ns. Technology: ENHANCEMENT MODE VERTICAL DMOS FET. Housing: TO-92. Housing (according to data sheet): TO-92. Operating temperature: -55...+150°C. Voltage Vds(max): 45V. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3.5V. Vgs(th) min.: 1V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : no. G-S Protection: no. Quantity in stock updated on 24/12/2024, 18:25.
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