BFG591

$[TITLE]$

Quantity	excl. VAT	VAT incl.
1 - 4	3.25$	3.25$
5 - 9	3.09$	3.09$
10 - 24	2.93$	2.93$
25 - 49	2.76$	2.76$
50 - 99	2.70$	2.70$
100 - 143	2.53$	2.53$

Quantity	U.P
1 - 4	3.25$	3.25$
5 - 9	3.09$	3.09$
10 - 24	2.93$	2.93$
25 - 49	2.76$	2.76$
50 - 99	2.70$	2.70$
100 - 143	2.53$	2.53$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 143

Set of 1

BFG591. Cost): 0.7pF. Semiconductor material: silicon. FT: 7GHz. Function: For VHF/UHF antenna amplifier and RF communication applications. Max hFE gain: 250. Minimum hFE gain: 60. Collector current: 200mA. Temperature: +150°C. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -60...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 15V. Vebo: 3V. Number of terminals: 4. Quantity per case: 1. BE diode: no. CE diode: no. Quantity in stock updated on 10/01/2025, 16:25.

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Delivery in 2-3 days, with postal tracking!