BFP193E6327

Quantity	excl. VAT	VAT incl.
1 - 9	0.46$	0.46$
10 - 24	0.44$	0.44$
25 - 49	0.42$	0.42$
50 - 68	0.39$	0.39$

Quantity	U.P
1 - 9	0.46$	0.46$
10 - 24	0.44$	0.44$
25 - 49	0.42$	0.42$
50 - 68	0.39$	0.39$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 68

Set of 1

BFP193E6327. C(in): 0.9pF. Cost): 0.28pF. Quantity per case: 1. Semiconductor material: silicon. FT: 8GHz. Function: UHF wideband transistor. Max hFE gain: 140. Minimum hFE gain: 70. Collector current: 80mA. Marking on the case: RCs. Pd (Power Dissipation, Max): 580mW (total 380mW). RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 20V. Collector/emitter voltage Vceo: 12V. Vebo: 2V. Number of terminals: 4. Spec info: screen printing/SMD code RCs. BE diode: no. CE diode: no. Quantity in stock updated on 11/01/2025, 02:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!