Electronic components and equipment, for businesses and individuals

BDV65BG

BDV65BG
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 4.26$ 4.26$
5 - 9 4.04$ 4.04$
10 - 24 3.83$ 3.83$
25 - 49 3.62$ 3.62$
50 - 99 2.61$ 2.61$
100 - 114 2.64$ 2.64$
Quantity U.P
1 - 4 4.26$ 4.26$
5 - 9 4.04$ 4.04$
10 - 24 3.83$ 3.83$
25 - 49 3.62$ 3.62$
50 - 99 2.61$ 2.61$
100 - 114 2.64$ 2.64$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 114
Set of 1

BDV65BG. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing: PCB soldering. Housing: TO-247. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV65BG. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Cutoff frequency ft [MHz]: 1000. Maximum dissipation Ptot [W]: 125W. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Spec info: complementary transistor (pair) BDV64B. Quantity in stock updated on 10/01/2025, 21:25.

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Quantity in stock : 395
TIP142

TIP142

Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary p...
TIP142
Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 10A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: Darlington Power Transistor. C(in): 100V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147. BE diode: no. CE diode: yes
TIP142
Cost): 60pF. Darlington transistor?: yes. Semiconductor material: silicon. Function: Complementary power Darlington transistor. Max hFE gain: 1000. Minimum hFE gain: 500. Collector current: 10A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Monolithic Darlington. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 100V. Vebo: 5V. Resistor B: Darlington Power Transistor. C(in): 100V. Number of terminals: 3. BE resistor: R1 typ=5k Ohms, R2 typ=60 Ohms. Spec info: complementary transistor (pair) TIP147. BE diode: no. CE diode: yes
Set of 1
2.32$ VAT incl.
(2.32$ excl. VAT)
2.32$

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