BDV64C-POW

Quantity	excl. VAT	VAT incl.
1 - 1	6.70$	6.70$
2 - 2	6.36$	6.36$
3 - 4	6.03$	6.03$
5 - 9	5.69$	5.69$
10 - 19	5.56$	5.56$
20 - 21	5.42$	5.42$

Quantity	U.P
1 - 1	6.70$	6.70$
2 - 2	6.36$	6.36$
3 - 4	6.03$	6.03$
5 - 9	5.69$	5.69$
10 - 19	5.56$	5.56$
20 - 21	5.42$	5.42$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 21

Set of 1

BDV64C-POW. Darlington transistor?: yes. Semiconductor material: silicon. Minimum hFE gain: 1000. Collector current: 12A. Ic(pulse): 15A. Pd (Power Dissipation, Max): 125W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) BDV65C. BE diode: no. CE diode: no. Quantity in stock updated on 10/01/2025, 21:25.

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Delivery in 2-3 days, with postal tracking!