BDT64C

Quantity	excl. VAT	VAT incl.
1 - 4	4.74$	4.74$
5 - 8	4.51$	4.51$

Quantity	U.P
1 - 4	4.74$	4.74$
5 - 8	4.51$	4.51$

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Quantity in stock : 8

Set of 1

BDT64C. Darlington transistor?: yes. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Collector current: 12A. Ic(pulse): 20A. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Tf(max): 2.5us. Tf(min): 0.5us. Housing: TO-220. Housing (according to data sheet): TO-220. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Collector/emitter voltage Vceo: 120V. Vebo: 2.5V. Quantity per case: 2. Number of terminals: 3. Note: 3k Ohms (R1), 45 Ohms (R2). Spec info: complementary transistor (pair) BDT65C. BE diode: yes. CE diode: yes. Quantity in stock updated on 10/01/2025, 20:25.

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Delivery in 2-3 days, with postal tracking!