Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1L. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Component family: NPN transistor. Housing: PCB soldering (SMD). Housing: SC-70. Housing (JEDEC standard): SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 0.1A. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 50V. Vebo: 6V. Spec info: SMD 2G

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 250. Minimum hFE gain: 125. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.075V. Collector/emitter voltage Vceo: 65V. Vebo: 5V. Spec info: screen printing/SMD code 3A

Cost): 4.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 475. Minimum hFE gain: 220. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3B. Equivalents: ON Semiconductor BC856BLT1G. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.065V. Collector/emitter voltage Vceo: 65V. Vebo: 5V. Spec info: screen printing/SMD code 3B. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SC-70. Housing (JEDEC standard): SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 250. Minimum hFE gain: 125. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3E. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: °C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: SMD 3E

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: SMD KO0 3F

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

ROHS: Yes. Housing: SOT363. Frequency: 100MHz. Power: 200mW. Assembly/installation: SMD. Type of transistor: PNP x2. Polarity: bipolar. Voltage (collector - emitter): 45V. Collector current Ic [A]: 100mA. Original packaging: 3000

RoHS: yes. Housing: PCB soldering (SMD). Housing: TSSOP6. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: 3Ft. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: dual PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: screen printing/CMS code 3G. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

ROHS: Yes. Housing: SOT23. Frequency: 100MHz, 150MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 100mA. Power: 0.25W

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3L. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 475. Minimum hFE gain: 220. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: SMD 3F

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 4C. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 0.1A. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no

Cost): 22pF. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Collector current: 2A. Ic(pulse): 3A. Marking on the case: CAC. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT89. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 20V. Vebo: 5V. Spec info: screen printing/SMD code CAC. BE diode: no. CE diode: no

Cost): 22pF. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Max hFE gain: 375. Minimum hFE gain: 160. Collector current: 2A. Ic(pulse): 3A. Marking on the case: CDC. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-89. Housing (according to data sheet): SOT89. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 20V. Vebo: 5V. Spec info: screen printing/SMD code CDC. BE diode: no. CE diode: no