BCX41E6327

Quantity	excl. VAT	VAT incl.
1 - 9	0.25$	0.25$
10 - 24	0.23$	0.23$
25 - 49	0.22$	0.22$
50 - 99	0.21$	0.21$
100 - 249	0.20$	0.20$
250 - 279	0.17$	0.17$

Quantity	U.P
1 - 9	0.25$	0.25$
10 - 24	0.23$	0.23$
25 - 49	0.22$	0.22$
50 - 99	0.21$	0.21$
100 - 249	0.20$	0.20$
250 - 279	0.17$	0.17$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 279

Set of 1

BCX41E6327. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NPN-transistor. AF applications and switching. Max hFE gain: 63. Minimum hFE gain: 25. Collector current: 0.8A. Ic(pulse): 1A. Marking on the case: EKs. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Collector/emitter voltage Vceo: 125V. Vebo: 5V. Spec info: complementary transistor (pair) BCX42. BE diode: no. CE diode: no. Quantity in stock updated on 10/01/2025, 13:25.

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Delivery in 2-3 days, with postal tracking!