Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-89. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: CEC. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF/S. Max hFE gain: 2000. Minimum hFE gain: 1000. Collector current: 1A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1.3V. Collector/emitter voltage Vceo: 45V. Vebo: 5V

RoHS: yes. Housing: PCB soldering (SMD). Housing: TSSOP6. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: M1. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: pair of NPN and PNP transistors

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP51/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BCP54-16. BE diode: no. CE diode: no

Cost): 15pF. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP52/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) BCP55-16. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP53-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C. Component family: PNP power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP 5316. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCP56-16. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1.5A. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP54/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BCP51-16. BE diode: no. CE diode: no

Cost): 25pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP 5516. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 60V. Vebo: 5V. Spec info: complementary transistor (pair) BCP52-16. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP56-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C. Component family: PNP power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Collector current: 1A. Ic(pulse): 2A. Marking on the case: BCP56/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BCP53-16. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH-10. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN power transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69/25. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: no. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: XGs. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Resistor B: 10k Ohms. BE resistor: 10k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 70. Collector current: 500mA. Marking on the case: XCs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. Vebo: 1V. Spec info: screen printing/CMS code XCs. BE diode: no. CE diode: no

Resistor B: 4.7k Ohms. BE resistor: 4.7k Ohms. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP Silicon Digital Transistor. Minimum hFE gain: 50. Collector current: 500mA. Marking on the case: XUs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: XHs. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor

RoHS: no. Component family: Darlington NPN Transistor. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: EF. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C