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Semiconductors Transistors

BC859B

BC859B
[TITLE]
[TITLE]
[TITLE]
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.67$ 0.67$
5 - 8 0.64$ 0.64$
Quantity (Set of 10) U.P
1 - 4 0.67$ 0.67$
5 - 8 0.64$ 0.64$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 71
Set of 10

BC859B. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 475. Minimum hFE gain: 220. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: SMD 3F. Quantity in stock updated on 10/01/2025, 10:25.

Technical documentation

Equivalent products :

Quantity in stock : 27977
BC857B

BC857B

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configur...
BC857B
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: SMD KO0 3F
BC857B
RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Vcbo: 50V. Collector/emitter voltage Vceo: 50V. Vebo: 5V. Spec info: SMD KO0 3F
Set of 10
0.36$ VAT incl.
(0.36$ excl. VAT)
0.36$
Quantity in stock : 2230
BC860C

BC860C

C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material:...
BC860C
C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 0.1A. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no
BC860C
C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 0.1A. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no
Set of 10
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 113
BC859C

BC859C

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max h...
BC859C
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C
BC859C
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C
Set of 10
0.68$ VAT incl.
(0.68$ excl. VAT)
0.68$

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