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NPN-Transistor, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V, SOT23, -45V - BC857B

NPN-Transistor, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V, SOT23, -45V - BC857B
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.34$ 0.34$
5 - 9 0.32$ 0.32$
10 - 24 0.31$ 0.31$
25 - 49 0.30$ 0.30$
50 - 99 0.29$ 0.29$
100 - 149 0.27$ 0.27$
150 - 8591 0.26$ 0.26$
Quantity (Set of 10) U.P
1 - 4 0.34$ 0.34$
5 - 9 0.32$ 0.32$
10 - 24 0.31$ 0.31$
25 - 49 0.30$ 0.30$
50 - 99 0.29$ 0.29$
100 - 149 0.27$ 0.27$
150 - 8591 0.26$ 0.26$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 85902
Set of 10

NPN-Transistor, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V, SOT23, -45V - BC857B. NPN-Transistor, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V, SOT23, -45V. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Housing: SOT23. Collector-Emitter Voltage VCEO: -45V. Pd (Power Dissipation, Max): 0.33W. Spec info: SMD KO0 3F. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V. Vebo: 5V. Type: transistor for low power applications. Polarity: PNP. Power: 0.25W. Collector-Base Voltage VCBO: -50V. Mounting Type: SMD. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 220. Current Max 1: 100mA. Max.Voltage IGBT VRSM: 100 MHz. Information: 0.25W. Series: BC. MSL: +150°C. Original product from manufacturer Yangjie Electronic Technology. Quantity in stock updated on 07/07/2025, 09:25.

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