Transistors

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6B. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-TR. Max hFE gain: 600. Minimum hFE gain: 250. Collector current: 0.5A. Ic(pulse): 1A. Marking on the case: 6C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.7V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: SMD 6C. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6C. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6g. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 800mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 6g. Collector-emitter voltage Uceo [V]: 25V. Collector current Ic [A], max.: 500mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

C(in): 11pF. Cost): 2pF. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Marking on the case: 1B. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): TO-236AB. Type of transistor: NPN. Vcbo: 80V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: SMD 1B. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SC-70. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 0.1A. Marking on the case: 8AC. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 250mV. Maximum saturation voltage VCE(sat): 600mV. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: SMD 8AC. BE diode: no. CE diode: no

Cost): 1.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 110. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 1E. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 45V. Spec info: screen printing/SMD code 1E. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.33W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Spec info: screen printing/SMD code 1F

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1F. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Darlington transistor?: no. Quantity per case: 2. Semiconductor material: silicon. FT: 100 MHz. Function: DUAL NPN & PNP. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 13. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-363 ( SC-88 ). Housing (according to data sheet): SOT-363. Type of transistor: PNP & NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Number of terminals: 6. Spec info: screen printing/SMD code 13. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SC-88. Housing (JEDEC standard): SOT-363. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 13. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Maximum dissipation Ptot [W]: 0.22W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: pair of NPN and PNP transistors

ROHS: Yes. Housing: SC88, SOT363. Frequency: 100MHz. Assembly/installation: SMD. Type of transistor: NPN x2. Polarity: bipolar. Voltage (collector - emitter): 45V. Collector current Ic [A]: 100mA. Power: 200mW

Cost): 4.5pF. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 250. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.225W. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 6V. Quantity per case: 1. Spec info: screen printing/SMD code 1G. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Number of terminals: 3. Quantity per case: 1. Spec info: screen printing/SMD code 1K

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1Ls. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor