Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.68$ | 0.68$ |
5 - 9 | 0.65$ | 0.65$ |
10 - 12 | 0.61$ | 0.61$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.68$ | 0.68$ |
5 - 9 | 0.65$ | 0.65$ |
10 - 12 | 0.61$ | 0.61$ |
BC859C. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C. Quantity in stock updated on 10/01/2025, 10:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.