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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - BC859C

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - BC859C
Quantity (Set of 10) excl. VAT VAT incl.
1 - 4 0.68$ 0.68$
5 - 9 0.65$ 0.65$
10 - 12 0.61$ 0.61$
Quantity (Set of 10) U.P
1 - 4 0.68$ 0.68$
5 - 9 0.65$ 0.65$
10 - 12 0.61$ 0.61$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 113
Set of 10

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v - BC859C. NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Vebo: 5V. Spec info: screen printing/SMD code 3G/4C. Quantity in stock updated on 19/04/2025, 22:25.

Technical documentation

Equivalent products :

Quantity in stock : 2220
BC860C

BC860C

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.1A. Housing: SO...
BC860C
NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no
BC860C
NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. C(in): 10pF. Cost): 4.5pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V. Spec info: screen printing/SMD code 4G. BE diode: no. CE diode: no
Set of 10
0.92$ VAT incl.
(0.92$ excl. VAT)
0.92$
Quantity in stock : 3919
BC857C

BC857C

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: ...
BC857C
NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: screen printing/CMS code 3G. BE diode: no. CE diode: no
BC857C
NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V. Spec info: screen printing/CMS code 3G. BE diode: no. CE diode: no
Set of 10
0.66$ VAT incl.
(0.66$ excl. VAT)
0.66$

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