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BC303

BC303
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Quantity excl. VAT VAT incl.
1 - 4 0.68$ 0.68$
5 - 9 0.64$ 0.64$
10 - 24 0.61$ 0.61$
25 - 49 0.58$ 0.58$
50 - 99 0.56$ 0.56$
100 - 249 0.55$ 0.55$
250 - 417 0.52$ 0.52$
Quantity U.P
1 - 4 0.68$ 0.68$
5 - 9 0.64$ 0.64$
10 - 24 0.61$ 0.61$
25 - 49 0.58$ 0.58$
50 - 99 0.56$ 0.56$
100 - 249 0.55$ 0.55$
250 - 417 0.52$ 0.52$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 417
Set of 1

BC303. Resistor B: PNP transistor. BE resistor: -60V. C(in): -0.5A. Cost): 0.85W. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Collector current: 0.5A. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Collector/emitter voltage Vceo: 60V. Vebo: 7V. BE diode: no. CE diode: no. Quantity in stock updated on 25/12/2024, 15:25.

Equivalent products :

Quantity in stock : 2746
BC640

BC640

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TR...
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
BC640
Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: PNP/100V/1A BIPOLAR TRANSISTOR. Max hFE gain: 250. Minimum hFE gain: 40. Collector current: 1A. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 80V. Vebo: 5V. Spec info: complementary transistor (pair) BC639. BE diode: no. CE diode: no
Set of 1
0.19$ VAT incl.
(0.19$ excl. VAT)
0.19$
Quantity in stock : 4415
2SA1013

2SA1013

Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain...
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
2SA1013
Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Collector current: 1A. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Collector/emitter voltage Vceo: 160V. Vebo: 6V. Spec info: complementary transistor (pair) 2SC2383. BE diode: no. CE diode: no
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 6084
2N5401

2N5401

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
2N5401
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: 2N5401
2N5401
RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP transistor. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 150V. Vebo: 5V. Spec info: 2N5401
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$

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2N5551

2N5551

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Qu...
2N5551
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Quantity in stock : 252
2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
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Quantity in stock : 286
2SA1943

2SA1943

Cost): 360pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT:...
2SA1943
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Quantity in stock : 154
MJE15030G

MJE15030G

Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Col...
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Quantity in stock : 133
MJE15031G

MJE15031G

Housing: TO-220. Resistor B: Power Transistor. BE resistor: -150V. C(in): -8A. Cost): 50W. Condition...
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Quantity in stock : 120
2SA1837

2SA1837

Cost): 30pF. Quantity per case: 1. Semiconductor material: silicon. FT: 70 MHz. Function: NF-L. Max ...
2SA1837
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Quantity in stock : 892
MPSA42

MPSA42

Cost): 3pF. Semiconductor material: silicon. FT: 50 MHz. Function: VIDEO amp.. Max hFE gain: 40. Min...
MPSA42
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Quantity in stock : 10406
1N4004

1N4004

RoHS: yes. Housing: DO-41. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr ...
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Quantity in stock : 34
2SC4793

2SC4793

Cost): 20pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF-L. Max...
2SC4793
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Quantity in stock : 114
NJM4558D

NJM4558D

Function: Operational amplifier. Note: OP-IC. Note: 158 series. Number of terminals: 8. RoHS: yes. A...
NJM4558D
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