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NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V - BC303

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V - BC303
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Quantity excl. VAT VAT incl.
1 - 4 0.68$ 0.68$
5 - 9 0.64$ 0.64$
10 - 24 0.62$ 0.62$
25 - 49 0.61$ 0.61$
50 - 99 0.60$ 0.60$
100 - 249 0.58$ 0.58$
250 - 279 0.58$ 0.58$
Quantity U.P
1 - 4 0.68$ 0.68$
5 - 9 0.64$ 0.64$
10 - 24 0.62$ 0.62$
25 - 49 0.61$ 0.61$
50 - 99 0.60$ 0.60$
100 - 249 0.58$ 0.58$
250 - 279 0.58$ 0.58$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 279
Set of 1

NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V - BC303. NPN-Transistor, 0.5A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.5A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.65 MHz. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Temperature: +175°C. Pd (Power Dissipation, Max): 0.85W. Assembly/installation: PCB through-hole mounting. Technology: EXPITAXIAL PLANAR SILICON TRANSISTOR. Type of transistor: PNP. Vcbo: 85V. Saturation voltage VCE(sat): 0.65V. Vebo: 7V. Resistor B: PNP transistor. BE resistor: -60V. C(in): -0.5A. Cost): 0.85W. Quantity in stock updated on 05/07/2025, 19:25.

Equivalent products :

Quantity in stock : 2116
BC640

BC640

NPN-Transistor, TO-92, TO-92, 80V, TO92, -80V. Housing: TO-92. Housing (according to data sheet): TO...
BC640
NPN-Transistor, TO-92, TO-92, 80V, TO92, -80V. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Housing: TO92. Collector-Emitter Voltage VCEO: -80V. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Type: transistor for low power applications. Polarity: PNP. Power: 0.625W. Collector-Base Voltage VCBO: -80V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: -1A. Max.Voltage IGBT VRSM: 250. Information: 40. Series: BC. MSL: 0.83W
BC640
NPN-Transistor, TO-92, TO-92, 80V, TO92, -80V. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 80V. Housing: TO92. Collector-Emitter Voltage VCEO: -80V. RoHS: yes. Spec info: complementary transistor (pair) BC639. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V. Type: transistor for low power applications. Polarity: PNP. Power: 0.625W. Collector-Base Voltage VCBO: -80V. Mounting Type: PCB through-hole mounting. Bandwidth MHz: 100MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: -1A. Max.Voltage IGBT VRSM: 250. Information: 40. Series: BC. MSL: 0.83W
Set of 1
0.19$ VAT incl.
(0.19$ excl. VAT)
0.19$
Quantity in stock : 4356
2SA1013

2SA1013

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (acc...
2SA1013
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2383. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V
2SA1013
NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 60. Marking on the case: A1013. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. RoHS: yes. Spec info: complementary transistor (pair) 2SC2383. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V
Set of 1
0.38$ VAT incl.
(0.38$ excl. VAT)
0.38$
Quantity in stock : 5717
2N5401

2N5401

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 160V, 600mA, TO-92, 150V. Housing: PCB soldering. Ho...
2N5401
NPN-Transistor, PCB soldering, TO-92, TO-226AA, 160V, 600mA, TO-92, 150V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 0.625W. Spec info: 2N5401. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
2N5401
NPN-Transistor, PCB soldering, TO-92, TO-226AA, 160V, 600mA, TO-92, 150V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 160V. Collector current Ic [A], max.: 600mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 150V. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2N5401. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Pd (Power Dissipation, Max): 0.625W. Spec info: 2N5401. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 160V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V
Set of 10
1.11$ VAT incl.
(1.11$ excl. VAT)
1.11$

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