Transistors

Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Collector current: 0.1A. Pd (Power Dissipation, Max): 0.4W. Type of transistor: PNP. Collector/emitter voltage Vceo: 180V. Spec info: TO18

Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: general purpose. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: hFE 420...800, (IC=2.0mAdc, VCE=5.0Vdc). Max hFE gain: 800. Minimum hFE gain: 100. Collector current: 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 30 v. Vebo: 5V

Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 3000. Collector current: 0.4A. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: PNP. Vcbo: 40V. Collector/emitter voltage Vceo: 30 v. Spec info: complementary transistor (pair) BC517

RoHS: yes. Component family: PNP Darlington Transistor. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 1A. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Collector current: 1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 30 v. Vebo: 10V. Spec info: complementary transistor (pair) BC516. BE diode: no. CE diode: no

RoHS: yes. Component family: Darlington NPN Transistor. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 1.2A. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 1A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Collector current: 1.2A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Type: Darlington transistor. Collector-Emitter Voltage VCEO: 30V. Power: 0.625W. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Collector/emitter voltage Vceo: 30 v. Vebo: 10V. Spec info: complementary transistor (pair) BC516

Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556A. BE diode: no. CE diode: no

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Collector current: 0.1A. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no

Housing: TO-92. Number of terminals: 3. Manufacturer's marking: BC546B. Collector-emitter voltage Uceo [V]: 65V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 80V. Collector current: 0.2A. Power: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

Type of transistor: NPN transistor. Polarity: NPN. Collector-Emitter Voltage VCEO: 65V. Collector current: 0.1A. Power: 0.5W. Housing: TO-92

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Collector/emitter voltage Vceo: 65V. Vebo: 6V. BE diode: no. CE diode: no

Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 90. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC557A. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547B. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Collector/emitter voltage Vceo: 45V. Vebo: 6V. Spec info: complementary transistor (pair) BC557B

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547B. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: TO-92. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 270. Collector current: 100mA. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Housing (according to data sheet): TO-92. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 45V. Vebo: 5V. Spec info: complementary transistor (pair) BC557C. BE diode: no. CE diode: no

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Collector current: 0.1A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Type of transistor: NPN. Vcbo: 30 v. Collector/emitter voltage Vceo: 30 v. Spec info: complementary transistor (pair) BC558B

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC548B. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor

ROHS: Yes. Housing: TO92. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 100mA. Gain hfe: 400. Power: 500mW

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC548C. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: NPN transistor