AP4800CGM

Quantity	excl. VAT	VAT incl.
1 - 4	0.89$	0.89$
5 - 9	0.85$	0.85$
10 - 24	0.80$	0.80$
25 - 49	0.76$	0.76$
50 - 68	0.74$	0.74$

Quantity	U.P
1 - 4	0.89$	0.89$
5 - 9	0.85$	0.85$
10 - 24	0.80$	0.80$
25 - 49	0.76$	0.76$
50 - 68	0.74$	0.74$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 68

Set of 1

AP4800CGM. C(in): 450pF. Cost): 120pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 20 ns. Type of transistor: MOSFET. Id(imp): 40A. ID (T=100°C): 8.4A. ID (T=25°C): 10.4A. Idss: 10uA. Idss (max): 10.4A. Marking on the case: 4800C G M. Number of terminals: 8. Pd (Power Dissipation, Max): 2.5W. On-resistance Rds On: 0.014 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 17 ns. Td(on): 7 ns. Technology: 'Enhancement Mode Power MOSFET'. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Function: fast Switching, DC/DC Converter. G-S Protection: no. Quantity in stock updated on 25/12/2024, 02:25.

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Delivery in 2-3 days, with postal tracking!