Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.19$ | 13.19$ |
2 - 2 | 12.53$ | 12.53$ |
3 - 4 | 11.87$ | 11.87$ |
5 - 9 | 11.21$ | 11.21$ |
10 - 13 | 10.95$ | 10.95$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.19$ | 13.19$ |
2 - 2 | 12.53$ | 12.53$ |
3 - 4 | 11.87$ | 11.87$ |
5 - 9 | 11.21$ | 11.21$ |
10 - 13 | 10.95$ | 10.95$ |
APT15GP60BDQ1G. C(in): 1685pF. Cost): 210pF. Channel type: N. Trr Diode (Min.): 55ms. Function: High frequency switch mode power supplies. Collector current: 56A. Ic(pulse): 65A. Ic(T=100°C): 27A. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 29 ns. Td(on): 8 ns. Technology: POWER MOS 7® IGBT. Housing: TO-247. Housing (according to data sheet): TO-247. Operating temperature: -55...+150°C. Saturation voltage VCE(sat): 2.2V. Maximum saturation voltage VCE(sat): 2.7V. Collector/emitter voltage Vceo: 600V. Gate/emitter voltage VGE: 20V. Gate/emitter voltage VGE(th) min.: 3V. Gate/emitter voltage VGE(th)max.: 6V. Number of terminals: 3. CE diode: yes. Germanium diode: no. Quantity in stock updated on 08/01/2025, 17:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.