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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - AP88N30W

N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - AP88N30W
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 1 12.29$ 12.29$
2 - 2 11.68$ 11.68$
3 - 4 11.43$ 11.43$
5 - 9 11.06$ 11.06$
10 - 14 10.82$ 10.82$
15 - 19 10.45$ 10.45$
20 - 29 10.08$ 10.08$
Quantity U.P
1 - 1 12.29$ 12.29$
2 - 2 11.68$ 11.68$
3 - 4 11.43$ 11.43$
5 - 9 11.06$ 11.06$
10 - 14 10.82$ 10.82$
15 - 19 10.45$ 10.45$
20 - 29 10.08$ 10.08$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 29
Set of 1

N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V - AP88N30W. N-channel transistor, 48A, 48A, 200uA, 48m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. On-resistance Rds On: 48m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 8440pF. Cost): 1775pF. Channel type: N. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 160A. IDss (min): 1uA. Marking on the case: 88N30W. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Original product from manufacturer Advanced Power. Quantity in stock updated on 08/06/2025, 11:25.

Technical documentation

Equivalent products :

Quantity in stock : 36
IXTQ88N30P

IXTQ88N30P

N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): ...
IXTQ88N30P
N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 220A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V
IXTQ88N30P
N-channel transistor, 75A, 88A, 1mA, 40m Ohms, TO-3P ( TO-218 SOT-93 ), TO-3P, 300V. ID (T=100°C): 75A. ID (T=25°C): 88A. Idss (max): 1mA. On-resistance Rds On: 40m Ohms. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Quantity per case: 1. Trr Diode (Min.): 250 ns. Type of transistor: MOSFET. Function: N-Channel Enhancement Mode. G-S Protection: no. Id(imp): 220A. IDss (min): 100uA. Number of terminals: 3. Pd (Power Dissipation, Max): 600W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 96 ns. Td(on): 25 ns. Technology: PolarHT Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 5V. Vgs(th) min.: 2.5V
Set of 1
14.36$ VAT incl.
(14.36$ excl. VAT)
14.36$

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