AP88N30W

Quantity	excl. VAT	VAT incl.
1 - 1	12.29$	12.29$
2 - 2	11.68$	11.68$
3 - 4	11.06$	11.06$
5 - 9	10.45$	10.45$
10 - 14	10.20$	10.20$
15 - 19	9.96$	9.96$
20 - 29	9.59$	9.59$

Quantity	U.P
1 - 1	12.29$	12.29$
2 - 2	11.68$	11.68$
3 - 4	11.06$	11.06$
5 - 9	10.45$	10.45$
10 - 14	10.20$	10.20$
15 - 19	9.96$	9.96$
20 - 29	9.59$	9.59$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 29

Set of 1

AP88N30W. C(in): 8440pF. Cost): 1775pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 300 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 160A. ID (T=100°C): 48A. ID (T=25°C): 48A. Idss (max): 200uA. IDss (min): 1uA. Marking on the case: 88N30W. Number of terminals: 3. Pd (Power Dissipation, Max): 312W. On-resistance Rds On: 48m Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 220 ns. Td(on): 50 ns. Technology: 'Enhancement-Mode Power MOSFET'. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Voltage Vds(max): 300V. Gate/source voltage Vgs: 30 v. Vgs(th) max.: 4.5V. Vgs(th) min.: 3V. Operating temperature: -55°C...+150°C. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 25/12/2024, 05:25.

Technical documentation

Equivalent products :

Quantity in stock : 36

IXTQ88N30P

C(in): 6300pF. Cost): 950pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 250...

Set of 1

14.36$ VAT incl.
(14.36$ excl. VAT)

14.36$

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