Quantity | excl. VAT | VAT incl. |
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1 - 3 | 1.81$ | 1.81$ |
Quantity | U.P | |
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1 - 3 | 1.81$ | 1.81$ |
2SC3303. Semiconductor material: silicon. FT: 120 MHz. Function: High Speed Switching. Max hFE gain: 240. Minimum hFE gain: 70. Collector current: 5A. Ic(pulse): 8A. Marking on the case: C3303. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Tf(max): 0.1us. Tf(min): 0.1us. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Collector/emitter voltage Vceo: 80V. Vebo: 7V. Number of terminals: 2. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 15:25.
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