Transistors

Semiconductor material: silicon. FT: 400 MHz. Function: Hi-def. Collector current: 0.2A. Pd (Power Dissipation, Max): 15W. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1476

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-92. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 50V/20V. Collector current Ic [A], max.: 500mA. Maximum dissipation Ptot [W]: 0.5W

C(in): 4pF. Cost): 10pF. Semiconductor material: silicon. Collector current: 5A. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 900V. Collector/emitter voltage Vceo: 550V. Quantity per case: 1

Resistor B: 22. BE resistor: 22. Semiconductor material: silicon. FT: 260 MHz. Collector current: 2A. Pd (Power Dissipation, Max): 1.5W. Assembly/installation: PCB through-hole mounting. Housing: TO-126F. Housing (according to data sheet): TO-126LP. Type of transistor: NPN. Collector/emitter voltage Vceo: 30 v. Function: hFE 800. Quantity per case: 1. Spec info: Hi-Ube, lo-sat.

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-98. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/30V. Collector current Ic [A], max.: 20mA. Maximum dissipation Ptot [W]: 0.1W

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: TO-98. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 50mA. Maximum dissipation Ptot [W]: 0.2W

Resistor B: 47. BE resistor: 10. Semiconductor material: silicon. FT: 300 MHz. Function: TV-ZF-E. Collector current: 0.05A. Pd (Power Dissipation, Max): 0.3W. Type of transistor: NPN. Collector/emitter voltage Vceo: 75V. Quantity per case: 1

Cost): 50pF. Semiconductor material: silicon. FT: 15 MHz. Minimum hFE gain: 500. Collector current: 3A. Pd (Power Dissipation, Max): 25W. Housing: TO-220FP. Housing (according to data sheet): MF20 TO220F. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 60V. Vebo: 6V. Quantity per case: 1. Function: Driver for Solenoid and Motor. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 20 MHz. Collector current: 8A. Pd (Power Dissipation, Max): 80W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Type of transistor: NPN. Collector/emitter voltage Vceo: 160V. Quantity per case: 1

Semiconductor material: silicon. FT: 20 MHz. Collector current: 15A. Marking on the case: C3856. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1492

Semiconductor material: silicon. Function: TV-HA. Collector current: 5A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. Collector current: 7A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. Collector current: 8A. Marking on the case: C3886A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Vebo: 5V. Number of terminals: 3. Quantity per case: 1. Spec info: MONITOR. Housing: TO-3PF (SOT399, 2-16E3A)

Semiconductor material: silicon. FT: 450 MHz. Function: TV/IF. Collector current: 0.02A. Type of transistor: NPN. Collector/emitter voltage Vceo: 25V. Quantity per case: 1

Semiconductor material: silicon. Function: HA, Hi-res. Collector current: 7A. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): TO-3PF. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Number of terminals: 3. Quantity per case: 1. Spec info: Rbe 60 Ohms. Housing: TO-3PF (SOT399, 2-16E3A)

Semiconductor material: silicon. Function: HA, Hi-res. Collector current: 8A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1400V. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. Function: HA, Hi-res. Collector current: 8A. Pd (Power Dissipation, Max): 50W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 600V. Quantity per case: 1. Spec info: MONITOR

RoHS: no. Component family: NPN bipolar transistor. Housing: PCB soldering. Housing: M31/J. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 180V. Collector current Ic [A], max.: 12A. Maximum dissipation Ptot [W]: 130W

Semiconductor material: silicon. Function: HA hi-def.. Collector current: 15A. Pd (Power Dissipation, Max): 180W. Type of transistor: NPN. Vcbo: 1500V. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Spec info: MONITOR

Semiconductor material: silicon. FT: 70 MHz. Function: High-Voltage Driver Applications. Collector current: 0.2A. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Housing: TO-92. Housing (according to data sheet): TO-92. Type of transistor: NPN. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Spec info: hFE 100...200

Semiconductor material: silicon. Collector current: 15A. Pd (Power Dissipation, Max): 130W. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247. Type of transistor: NPN. Vcbo: 600V. Collector/emitter voltage Vceo: 450V. Quantity per case: 1. Function: S-L. Spec info: 500/2200ns

Semiconductor material: silicon. Function: UHF. Collector current: 0.065A. Power: 200mW. Type of transistor: NPN. Vcbo: 20V. Collector/emitter voltage Vceo: 10V. Vebo: 1.5V. Quantity per case: 1. Spec info: 9000MHZ. BE diode: no. CE diode: no

Semiconductor material: silicon. FT: 20 MHz. Function: Switching Regulator Applications. Collector current: 7A. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 500V. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Spec info: 2SD4106M

Semiconductor material: silicon. FT: 20 MHz. Function: Fast Switching Speed. Max hFE gain: 50. Minimum hFE gain: 15. Collector current: 10A. Ic(pulse): 20A. Marking on the case: C4107. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.3us. Housing: TO-220. Housing (according to data sheet): TO-220AB. Type of transistor: NPN. Vcbo: 500V. Saturation voltage VCE(sat): 0.8V. Collector/emitter voltage Vceo: 400V. Number of terminals: 3. Quantity per case: 1

Semiconductor material: silicon. FT: 30 MHz. Function: DC/DC voltage converter. Max hFE gain: 220. Minimum hFE gain: 70. Collector current: 7A. Ic(pulse): 14A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Type of transistor: NPN. Vcbo: 200V. Saturation voltage VCE(sat): 0.5V. Collector/emitter voltage Vceo: 120V. Number of terminals: 3. Quantity per case: 1. Spec info: COB--110pF (VCB=10V, f=1MHzC)