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Semiconductors Transistors

2SC3281

2SC3281
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.86$ 2.86$
5 - 9 2.72$ 2.72$
10 - 24 2.58$ 2.58$
25 - 26 2.43$ 2.43$
Quantity U.P
1 - 4 2.86$ 2.86$
5 - 9 2.72$ 2.72$
10 - 24 2.58$ 2.58$
25 - 26 2.43$ 2.43$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 26
Set of 1

2SC3281. Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Collector/emitter voltage Vceo: 200V. Number of terminals: 3. Quantity per case: 1. Spec info: complementary transistor (pair) 2SA1302. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 02:25.

Technical documentation

Equivalent products :

Quantity in stock : 252
2SC5200

2SC5200

Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Pow...
2SC5200
Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no
2SC5200
Cost): 200pF. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HI-FI Power Amplifier. Max hFE gain: 160. Minimum hFE gain: 80. Collector current: 15A. Marking on the case: C5200 (Q). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264 ( 2-21F1A ). Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Collector/emitter voltage Vceo: 230V. Vebo: 5V. Spec info: complementary transistor (pair) 2SA1943. BE diode: no. CE diode: no
Set of 1
7.86$ VAT incl.
(7.86$ excl. VAT)
7.86$
Quantity in stock : 13
MJL3281A

MJL3281A

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar P...
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
MJL3281A
Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Max hFE gain: 150. Minimum hFE gain: 45. Collector current: 15A. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Collector/emitter voltage Vceo: 260V. Vebo: 5V. Spec info: complementary transistor (pair) MJL1302A. BE diode: no. CE diode: no
Set of 1
12.03$ VAT incl.
(12.03$ excl. VAT)
12.03$

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Quantity in stock : 26
2SC3281

2SC3281

Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
2SC3281
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2SC3281
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Quantity in stock : 35
MJL1302A

MJL1302A

Cost): 1.7pF. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor...
MJL1302A
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2SA1302

2SA1302

Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
2SA1302
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2.92$
Quantity in stock : 1028
M3W-10R

M3W-10R

Resistance: 10 Ohms. Power: 3W. Resistor type: Metal layer. Temperature stability: 350ppm/°C. Opera...
M3W-10R
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M3W-10R
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0.11$ VAT incl.
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0.11$
Quantity in stock : 7214
MF-60-S-4K7

MF-60-S-4K7

Resistance: 4.7k Ohms. Power: 0.6W. Resistor type: Metal layer. Temperature stability: 50ppm/°C. Op...
MF-60-S-4K7
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MF-60-S-4K7
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Quantity in stock : 3187
1N4005

1N4005

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon...
1N4005
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1N4005
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0.0473$ VAT incl.
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0.0473$
Quantity in stock : 5
2SC2166

2SC2166

Semiconductor material: silicon. FT: 27 MHz. Collector current: 4A. Pd (Power Dissipation, Max): 6W....
2SC2166
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2SC2166
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Quantity in stock : 148
MJL21194

MJL21194

Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @...
MJL21194
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MJL21194
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8.73$
Quantity in stock : 6084
2N5401

2N5401

RoHS: yes. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Configuration...
2N5401
[LONGDESCRIPTION]
2N5401
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0.11$ VAT incl.
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0.11$
Quantity in stock : 1012
BC560C

BC560C

Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380....
BC560C
[LONGDESCRIPTION]
BC560C
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0.11$ VAT incl.
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0.11$

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