Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.15$ | 3.15$ |
5 - 9 | 2.99$ | 2.99$ |
10 - 22 | 2.83$ | 2.83$ |
Quantity | U.P | |
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1 - 4 | 3.15$ | 3.15$ |
5 - 9 | 2.99$ | 2.99$ |
10 - 22 | 2.83$ | 2.83$ |
2SC3225. Semiconductor material: silicon. FT: 200 MHz. Function: Hi-Beta, lo-sat.. Minimum hFE gain: 500. Collector current: 2A. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Tf(max): 1.2us. Tf(min): 1us. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.3V. Collector/emitter voltage Vceo: 40V. Vebo: 7V. Number of terminals: 3. Note: 9mm. Quantity per case: 1. Quantity in stock updated on 26/12/2024, 05:25.
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