Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 13.02$ | 13.02$ |
2 - 2 | 12.37$ | 12.37$ |
3 - 4 | 11.72$ | 11.72$ |
5 - 9 | 11.07$ | 11.07$ |
10 - 14 | 10.81$ | 10.81$ |
15 - 19 | 10.55$ | 10.55$ |
20 - 28 | 10.16$ | 10.16$ |
Quantity | U.P | |
---|---|---|
1 - 1 | 13.02$ | 13.02$ |
2 - 2 | 12.37$ | 12.37$ |
3 - 4 | 11.72$ | 11.72$ |
5 - 9 | 11.07$ | 11.07$ |
10 - 14 | 10.81$ | 10.81$ |
15 - 19 | 10.55$ | 10.55$ |
20 - 28 | 10.16$ | 10.16$ |
MJ15016-ONS. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Collector current: 15A. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Collector/emitter voltage Vceo: 120V. Vebo: 7V. Spec info: complementary transistor (pair) MJ15015. BE diode: no. CE diode: no. Quantity in stock updated on 24/12/2024, 01:25.
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