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MJ15022-ONS

MJ15022-ONS
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Quantity excl. VAT VAT incl.
1 - 1 13.46$ 13.46$
2 - 2 12.79$ 12.79$
3 - 4 12.12$ 12.12$
5 - 9 11.44$ 11.44$
10 - 14 11.18$ 11.18$
15 - 19 10.91$ 10.91$
20 - 25 10.50$ 10.50$
Quantity U.P
1 - 1 13.46$ 13.46$
2 - 2 12.79$ 12.79$
3 - 4 12.12$ 12.12$
5 - 9 11.44$ 11.44$
10 - 14 11.18$ 11.18$
15 - 19 10.91$ 10.91$
20 - 25 10.50$ 10.50$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 25
Set of 1

MJ15022-ONS. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 200V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15023. BE diode: no. CE diode: yes. Quantity in stock updated on 24/12/2024, 17:25.

Equivalent products :

Quantity in stock : 48
MJ15024-ONS

MJ15024-ONS

Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power...
MJ15024-ONS
Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15025. BE diode: no. CE diode: no
MJ15024-ONS
Cost): 1.6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Collector current: 16A. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Collector/emitter voltage Vceo: 250V. Vebo: 5V. Spec info: complementary transistor (pair) MJ15025. BE diode: no. CE diode: no
Set of 1
15.68$ VAT incl.
(15.68$ excl. VAT)
15.68$

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MJ15025-ONS

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Cost): 280pF. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power...
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MJE340

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Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Collector current: 15A. Pd (Power...
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2SA1302

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Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: HIFI-NF-E. Collector cu...
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Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 380....
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MPSA56

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TIP42C

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Semiconductor material: silicon. FT: 3 MHz. Function: Complementary power transistors. Max hFE gain:...
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