langue
Electronic components and equipment, for businesses and individuals
Semiconductors Diodes
Standard and Rectifier Diodes

Standard and Rectifier Diodes

513 products available
Products per page :
Quantity in stock : 11
40HFR80

40HFR80

Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be use...
40HFR80
Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)
40HFR80
Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)
Set of 1
13.88$ VAT incl.
(13.88$ excl. VAT)
13.88$
Quantity in stock : 565
5TUZ47

5TUZ47

Semiconductor material: silicon. Forward current (AV): 5A. Note: SILICON DIFFUSED TYPE. Note: HOR.DE...
5TUZ47
Semiconductor material: silicon. Forward current (AV): 5A. Note: SILICON DIFFUSED TYPE. Note: HOR.DEFLEC.OUTPUT COLOR TV. Note: trr 0.6us. VRRM: 1500V
5TUZ47
Semiconductor material: silicon. Forward current (AV): 5A. Note: SILICON DIFFUSED TYPE. Note: HOR.DEFLEC.OUTPUT COLOR TV. Note: trr 0.6us. VRRM: 1500V
Set of 1
0.79$ VAT incl.
(0.79$ excl. VAT)
0.79$
Quantity in stock : 25
60APU02-N3

60APU02-N3

Cj: 87pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semico...
60APU02-N3
Cj: 87pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Forward current (AV): 60A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. Marking on the case: 60APU02. Equivalents: 60APU02PBF, VS-60APU02PBF. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.98V. VRRM: 200V. Spec info: Trr 35nS, IF=1.0A, dIF/dt=200A/us, VR=30V. Function: Ultrafast Soft Recovery Diode
60APU02-N3
Cj: 87pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Forward current (AV): 60A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. Marking on the case: 60APU02. Equivalents: 60APU02PBF, VS-60APU02PBF. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.98V. VRRM: 200V. Spec info: Trr 35nS, IF=1.0A, dIF/dt=200A/us, VR=30V. Function: Ultrafast Soft Recovery Diode
Set of 1
5.80$ VAT incl.
(5.80$ excl. VAT)
5.80$
Quantity in stock : 16
62169213020

62169213020

Semiconductor material: silicon. Forward current (AV): 1.2A. Note: SAMSUNG. VRRM: 400V...
62169213020
Semiconductor material: silicon. Forward current (AV): 1.2A. Note: SAMSUNG. VRRM: 400V
62169213020
Semiconductor material: silicon. Forward current (AV): 1.2A. Note: SAMSUNG. VRRM: 400V
Set of 1
0.76$ VAT incl.
(0.76$ excl. VAT)
0.76$
Quantity in stock : 196
6A100G-R0G

6A100G-R0G

Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semi...
6A100G-R0G
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Equivalents: 6A100G-R0G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--250Ap (t=8.3ms)
6A100G-R0G
Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Equivalents: 6A100G-R0G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--250Ap (t=8.3ms)
Set of 1
0.48$ VAT incl.
(0.48$ excl. VAT)
0.48$
Quantity in stock : 75
70HF160

70HF160

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathod...
70HF160
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000Ap / 10ms 50Hz (100% Vrrm)
70HF160
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000Ap / 10ms 50Hz (100% Vrrm)
Set of 1
16.06$ VAT incl.
(16.06$ excl. VAT)
16.06$
Out of stock
70HF80

70HF80

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathod...
70HF80
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)
70HF80
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)
Set of 1
15.79$ VAT incl.
(15.79$ excl. VAT)
15.79$
Quantity in stock : 70
70HFR160

70HFR160

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode....
70HFR160
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000App / 10ms (100% Vrrm)
70HFR160
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000App / 10ms (100% Vrrm)
Set of 1
16.99$ VAT incl.
(16.99$ excl. VAT)
16.99$
Quantity in stock : 13
70HFR80

70HFR80

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode....
70HFR80
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)
70HFR80
Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)
Set of 1
13.73$ VAT incl.
(13.73$ excl. VAT)
13.73$
Quantity in stock : 13
80EBU04

80EBU04

Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semico...
80EBU04
Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): POWERTAB. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.92V. VRRM: 400V. Used for: can also be used for solar panel systems. Spec info: IFSM--800Ap (Tc--25). Function: Ultrafast Soft Recovery Diode
80EBU04
Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): POWERTAB. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.92V. VRRM: 400V. Used for: can also be used for solar panel systems. Spec info: IFSM--800Ap (Tc--25). Function: Ultrafast Soft Recovery Diode
Set of 1
8.17$ VAT incl.
(8.17$ excl. VAT)
8.17$
Quantity in stock : 180
80SQ05

80SQ05

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward curre...
80SQ05
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. MRI (max): 20mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.4x7.5mm). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V. VRRM: 50V. Number of terminals: 2. IFSM: 155A / 50Hz, 180A / 60Hz. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: i2t--132Ap t<10us, TA=25°C
80SQ05
Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. MRI (max): 20mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.4x7.5mm). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V. VRRM: 50V. Number of terminals: 2. IFSM: 155A / 50Hz, 180A / 60Hz. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: i2t--132Ap t<10us, TA=25°C
Set of 1
0.84$ VAT incl.
(0.84$ excl. VAT)
0.84$
Quantity in stock : 13
893-399016AB

893-399016AB

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
893-399016AB
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AP. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V. Spec info: IFMS 50Ap
893-399016AB
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AP. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V. Spec info: IFMS 50Ap
Set of 1
0.58$ VAT incl.
(0.58$ excl. VAT)
0.58$
Quantity in stock : 3959
BA157

BA157

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semic...
BA157
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. VRRM: 400V. Number of terminals: 2
BA157
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. VRRM: 400V. Number of terminals: 2
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 21877
BA159

BA159

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semic...
BA159
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2
BA159
Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2
Set of 10
0.39$ VAT incl.
(0.39$ excl. VAT)
0.39$
Quantity in stock : 2358
BAR43

BAR43

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Max reverse voltage: 30V. Threshold voltage: ...
BAR43
ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Max reverse voltage: 30V. Threshold voltage: 450mV. Driving current: 100mA. Reaction time: 4ns. Semiconductor structure: diode. Pulse current max.: 750mA. Conduction voltage (threshold voltage): 1V
BAR43
ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Max reverse voltage: 30V. Threshold voltage: 450mV. Driving current: 100mA. Reaction time: 4ns. Semiconductor structure: diode. Pulse current max.: 750mA. Conduction voltage (threshold voltage): 1V
Set of 5
0.32$ VAT incl.
(0.32$ excl. VAT)
0.32$
Quantity in stock : 3037
BAR43A

BAR43A

Cj: 5pF. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. For...
BAR43A
Cj: 5pF. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. Forward current (AV): 0.1A. IFSM: 0.75A. MRI (max): 100mA. MRI (min): 500nA. Marking on the case: DB1. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23L. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.45V. Forward voltage Vf (min): 0.26V. VRRM: 30 v. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: IFSM--750mA t=10ms
BAR43A
Cj: 5pF. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. Forward current (AV): 0.1A. IFSM: 0.75A. MRI (max): 100mA. MRI (min): 500nA. Marking on the case: DB1. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23L. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.45V. Forward voltage Vf (min): 0.26V. VRRM: 30 v. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: IFSM--750mA t=10ms
Set of 5
0.51$ VAT incl.
(0.51$ excl. VAT)
0.51$
Quantity in stock : 2536
BAS16LT-1

BAS16LT-1

Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semicond...
BAS16LT-1
Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semiconductor material: silicon. Function: switching diode. Forward current (AV): 200mA. IFSM: 500mA. Note: screen printing/SMD code A6s, A6t. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. VRRM: 75V
BAS16LT-1
Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semiconductor material: silicon. Function: switching diode. Forward current (AV): 200mA. IFSM: 500mA. Note: screen printing/SMD code A6s, A6t. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. VRRM: 75V
Set of 10
0.61$ VAT incl.
(0.61$ excl. VAT)
0.61$
Quantity in stock : 17970
BAS21

BAS21

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semicon...
BAS21
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Voltage Switching Diode. Forward current (AV): 200mA. IFSM: 625mA. Note: screen printing/SMD code JS. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A
BAS21
Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Voltage Switching Diode. Forward current (AV): 200mA. IFSM: 625mA. Note: screen printing/SMD code JS. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A
Set of 10
0.41$ VAT incl.
(0.41$ excl. VAT)
0.41$
Quantity in stock : 9811
BAS34

BAS34

Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon....
BAS34
Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 0.2A. IFSM: 2A. MRI (max): 0.5uA. MRI (min): 1nA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1V. VRRM: 70V. Spec info: IFSM--2Ap, t=1µs
BAS34
Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 0.2A. IFSM: 2A. MRI (max): 0.5uA. MRI (min): 1nA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1V. VRRM: 70V. Spec info: IFSM--2Ap, t=1µs
Set of 10
1.61$ VAT incl.
(1.61$ excl. VAT)
1.61$
Quantity in stock : 2628
BAS40-02

BAS40-02

Cj: 4pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Fu...
BAS40-02
Cj: 4pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 120mA. IFSM: 0.6A. Marking on the case: .W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-523. Housing (according to data sheet): SOD-523. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--600mA t=1s
BAS40-02
Cj: 4pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 120mA. IFSM: 0.6A. Marking on the case: .W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-523. Housing (according to data sheet): SOD-523. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--600mA t=1s
Set of 10
1.12$ VAT incl.
(1.12$ excl. VAT)
1.12$
Quantity in stock : 3069
BAS40-05

BAS40-05

Cj: 5pF. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. F...
BAS40-05
Cj: 5pF. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 0.2A. IFSM: 0.6A. Marking on the case: 45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--600mA t=1s
BAS40-05
Cj: 5pF. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 0.2A. IFSM: 0.6A. Marking on the case: 45. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Quantity per case: 2. Number of terminals: 3. Spec info: IFSM--600mA t=1s
Set of 10
0.53$ VAT incl.
(0.53$ excl. VAT)
0.53$
Quantity in stock : 2937
BAS40-07

BAS40-07

Cj: 5pF. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Func...
BAS40-07
Cj: 5pF. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 0.2A. IFSM: 0.6A. Marking on the case: 47 s. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143B. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Quantity per case: 2. Number of terminals: 4. Spec info: IFSM--600mA t=1s
BAS40-07
Cj: 5pF. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 0.2A. IFSM: 0.6A. Marking on the case: 47 s. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-143. Housing (according to data sheet): SOT-143B. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Quantity per case: 2. Number of terminals: 4. Spec info: IFSM--600mA t=1s
Set of 10
1.28$ VAT incl.
(1.28$ excl. VAT)
1.28$
Quantity in stock : 901
BAS45A

BAS45A

Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: An...
BAS45A
Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.5us. Semiconductor material: silicon. Function: Low-leakage diode. Forward current (AV): 250mA. IFSM: 1A. Note: low reverse current. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 3.4x1.6mm ). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.78V. VRRM: 125V. Spec info: IFSM--1A t=1mS, 4A t=1uS
BAS45A
Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.5us. Semiconductor material: silicon. Function: Low-leakage diode. Forward current (AV): 250mA. IFSM: 1A. Note: low reverse current. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 3.4x1.6mm ). Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.78V. VRRM: 125V. Spec info: IFSM--1A t=1mS, 4A t=1uS
Set of 1
0.41$ VAT incl.
(0.41$ excl. VAT)
0.41$
Quantity in stock : 1718
BAS85

BAS85

Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. F...
BAS85
Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. Forward current (AV): 0.2A. IFSM: 4A. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
BAS85
Cj: 10pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. Forward current (AV): 0.2A. IFSM: 4A. MRI (max): 2uA. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Number of terminals: 2. Quantity per case: 1. Spec info: IFSM--4A t=10ms
Set of 10
0.78$ VAT incl.
(0.78$ excl. VAT)
0.78$
Quantity in stock : 21732
BAS85-GS08

BAS85-GS08

RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering ...
BAS85-GS08
RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering (SMD). Housing: SOD80. Housing (JEDEC standard): Sb. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 0.6A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 0.2uA..2uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA
BAS85-GS08
RoHS: yes. Component family: Schottky diode for small signals, SMD mounting. Housing: PCB soldering (SMD). Housing: SOD80. Housing (JEDEC standard): Sb. Configuration: surface-mounted component (SMD). Number of terminals: 2. Forward current [A]: 0.2A. Ifsm [A]: 0.6A. Close voltage (repetitive) Vrrm [V]: 30 v. Leakage current on closing Ir [A]: 0.2uA..2uA. Switching speed (regeneration time) tr [sec.]: 5 ns. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V. VRRM: 30 v. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Forward voltage Vfmax (V): 0.4V @ 10mA
Set of 5
0.43$ VAT incl.
(0.43$ excl. VAT)
0.43$

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.