Standard and Rectifier Diodes

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 400V. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Note: M6 thread. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM--480App / 10mS (100% Vrrm). Assembly/installation: Threaded fastening. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 800V. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Note: M6 thread. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM--480App / 10mS (100% Vrrm). Assembly/installation: screw. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V

Forward current (AV): 5A. VRRM: 1500V. Semiconductor material: silicon. Note: SILICON DIFFUSED TYPE. Note: HOR.DEFLEC.OUTPUT COLOR TV. Note: trr 0.6us

Forward current (AV): 60A. IFSM: 800A. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. VRRM: 200V. Cj: 87pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 2mA. MRI (min): 50uA. Marking on the case: 60APU02. Equivalents: 60APU02PBF, VS-60APU02PBF. Number of terminals: 3. RoHS: yes. Spec info: Trr 35nS, IF=1.0A, dIF/dt=200A/us, VR=30V. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.98V

Forward current (AV): 1.2A. VRRM: 400V. Semiconductor material: silicon. Note: SAMSUNG

Forward current (AV): 6A. IFSM: 250A. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). VRRM: 1000V. Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Equivalents: 6A100G-R0G. Number of terminals: 2. RoHS: yes. Spec info: IFSM--250Ap (t=8.3ms). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V

Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1600V. Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Note: M6 thread. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM 1000Ap / 10ms 50Hz (100% Vrrm). Assembly/installation: screw. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V

Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 800V. Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Note: M6 thread. Number of terminals: 1. RoHS: yes. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm). Assembly/installation: Threaded fastening. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V

Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 1600V. Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Note: M6 thread. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Spec info: IFSM 1000App / 10ms (100% Vrrm). Assembly/installation: screw. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V

Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. VRRM: 800V. Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Note: M6 thread. Number of terminals: 1. RoHS: yes. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm). Assembly/installation: screw. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V

Forward current (AV): 80A. IFSM: 800A. Housing (according to data sheet): POWERTAB. VRRM: 400V. Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: Ultrafast Soft Recovery Diode. MRI (max): 2mA. MRI (min): 50uA. RoHS: yes. Spec info: IFSM--800Ap (Tc--25). Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.92V

Forward current (AV): 8A. IFSM: 155A / 50Hz, 180A / 60Hz. Housing: DO-27. Housing (according to data sheet): DO-27 (5.4x7.5mm). VRRM: 50V. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Function: Schottky Barrier Rectifier Diode, Axial Leads. MRI (max): 20mA. MRI (min): 0.5mA. Number of terminals: 2. RoHS: yes. Spec info: i2t--132Ap t<10us, TA=25°C. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V

Forward current (AV): 2A. IFSM: 50A. Housing: DO-204. Housing (according to data sheet): DO-204AP. VRRM: 50V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Spec info: IFMS 50Ap. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 400V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: High-speed switching. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C

Forward current (AV): 1A. IFSM: 30A. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). VRRM: 1000V. Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Max reverse voltage: 30V. Threshold voltage: 450mV. Driving current: 100mA. Reaction time: 4ns. Semiconductor structure: diode. Pulse current max.: 750mA. Conduction voltage (threshold voltage): 1V

Forward current (AV): 0.1A. IFSM: 0.75A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23L. VRRM: 30 v. Cj: 5pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. MRI (max): 100mA. MRI (min): 500nA. Marking on the case: DB1. Number of terminals: 3. RoHS: yes. Spec info: IFSM--750mA t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.45V. Forward voltage Vf (min): 0.26V

Forward current (AV): 200mA. IFSM: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). VRRM: 75V. Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semiconductor material: silicon. Function: switching diode. Note: screen printing/SMD code A6s, A6t. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV

Forward current (AV): 200mA. IFSM: 625mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 250V. Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Voltage Switching Diode. Note: screen printing/SMD code JS. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Number of terminals: 3. RoHS: yes. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V

Forward current (AV): 0.2A. IFSM: 2A. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. VRRM: 70V. Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. MRI (max): 0.5uA. MRI (min): 1nA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--2Ap, t=1µs. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1V

Forward current (AV): 120mA. IFSM: 0.6A. Housing: SOD-523. Housing (according to data sheet): SOD-523. VRRM: 40V. Cj: 4pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: .W. Number of terminals: 2. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 40V. Cj: 5pF. Quantity per case: 2. Dielectric structure: common cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 45. Number of terminals: 3. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 0.2A. IFSM: 0.6A. Housing: SOT-143. Housing (according to data sheet): SOT-143B. VRRM: 40V. Cj: 5pF. Quantity per case: 2. Dielectric structure: independent. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Marking on the case: 47 s. Number of terminals: 4. RoHS: yes. Spec info: IFSM--600mA t=1s. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V

Forward current (AV): 250mA. IFSM: 1A. Housing: DO-34 ( SOD68 ). Housing (according to data sheet): DO-34 ( 3.4x1.6mm ). VRRM: 125V. Cj: 4pF. Conditioning: roll. Conditioning unit: 5000. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1.5us. Semiconductor material: silicon. Function: Low-leakage diode. Note: low reverse current. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Spec info: IFSM--1A t=1mS, 4A t=1uS. Assembly/installation: PCB through-hole mounting. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.78V

Forward current (AV): 0.2A. IFSM: 4A. Housing: 12.7k Ohms. Housing (according to data sheet): SOD-80C. VRRM: 30 v. Cj: 10pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Glass Fast Switching Schottky Barrier Diodes. MRI (max): 2uA. Number of terminals: 2. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Spec info: IFSM--4A t=10ms. Assembly/installation: surface-mounted component (SMD). Operating temperature: -55...+125°C. Threshold voltage Vf (max): 0.8V. Forward voltage Vf (min): 0.24V