Standard and Rectifier Diodes

Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 1200V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 400V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Function: High peak current capability. Forward current (AV): 40A. Forward current (RMS): 62A. IFSM: 570A. MRI (max): 9mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+190°C. Threshold voltage Vf (max): 1.5V. Forward voltage Vf (min): 1.3V. VRRM: 800V. Note: M6 thread. Spec info: IFSM--480App / 10mS (100% Vrrm)

Semiconductor material: silicon. Forward current (AV): 5A. Note: SILICON DIFFUSED TYPE. Note: HOR.DEFLEC.OUTPUT COLOR TV. Note: trr 0.6us. VRRM: 1500V

Cj: 87pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 28 ns. Semiconductor material: silicon. Forward current (AV): 60A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. Marking on the case: 60APU02. Equivalents: 60APU02PBF, VS-60APU02PBF. Number of terminals: 3. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: TO-247. Housing (according to data sheet): TO-247AC 3L. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.08V. Forward voltage Vf (min): 0.98V. VRRM: 200V. Spec info: Trr 35nS, IF=1.0A, dIF/dt=200A/us, VR=30V. Function: Ultrafast Soft Recovery Diode

Semiconductor material: silicon. Forward current (AV): 1.2A. Note: SAMSUNG. VRRM: 400V

Cj: 60pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 2500 ns. Semiconductor material: silicon. Forward current (AV): 6A. IFSM: 250A. MRI (max): 100uA. MRI (min): 10uA. Marking on the case: 6A10. Equivalents: 6A100G-R0G. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: R-6. Housing (according to data sheet): R-6 ( 9.1x7.2mm ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 1V. VRRM: 1000V. Spec info: IFSM--250Ap (t=8.3ms)

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000Ap / 10ms 50Hz (100% Vrrm)

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the cathode. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: Threaded fastening. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. MRI (max): 4.5mA. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 1600V. Note: M6 thread. Spec info: IFSM 1000App / 10ms (100% Vrrm)

Conditioning unit: 100dB. Quantity per case: 1. Dielectric structure: casing connected to the anode. Used for: can also be used for solar panel systems. Semiconductor material: silicon. Forward current (AV): 70A. Forward current (RMS): 110A. IFSM: 1200A. Number of terminals: 1. RoHS: yes. Assembly/installation: screw. Housing: DO-203AB ( DO-5 ). Housing (according to data sheet): DO-203AB. Operating temperature: -65...+180°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.79V. VRRM: 800V. Note: M6 thread. Spec info: Ifsm 1200Ap / 10ms 50Hz (100% Vrrm)

Cj: 50pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Forward current (AV): 80A. IFSM: 800A. MRI (max): 2mA. MRI (min): 50uA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing (according to data sheet): POWERTAB. Operating temperature: -55...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 0.92V. VRRM: 400V. Used for: can also be used for solar panel systems. Spec info: IFSM--800Ap (Tc--25). Function: Ultrafast Soft Recovery Diode

Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: Sb. Forward current (AV): 8A. MRI (max): 20mA. MRI (min): 0.5mA. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-27. Housing (according to data sheet): DO-27 (5.4x7.5mm). Operating temperature: -50...+150°C. Threshold voltage Vf (max): 0.55V. Forward voltage Vf (min): 0.5V. VRRM: 50V. Number of terminals: 2. IFSM: 155A / 50Hz, 180A / 60Hz. Function: Schottky Barrier Rectifier Diode, Axial Leads. Spec info: i2t--132Ap t<10us, TA=25°C

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: GLASS PASSIVATED FAST SWITCHING RECTIFIER. Forward current (AV): 2A. IFSM: 50A. Note: SAMSUNG. MRI (max): 5uA. MRI (min): 1uA. Marking on the case: RG2A. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-204. Housing (according to data sheet): DO-204AP. Operating temperature: -65...+175°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 50V. Spec info: IFMS 50Ap

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 150 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. VRRM: 400V. Number of terminals: 2

Cj: 15pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 500 ns. Semiconductor material: silicon. Function: High-speed switching. Forward current (AV): 1A. IFSM: 30A. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-41. Housing (according to data sheet): DO-41 ( 5.2X2.7mm ). Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.3V. Forward voltage Vf (min): 1.3V. VRRM: 1000V. Number of terminals: 2

ROHS: Yes. Housing: SOT23. Assembly/installation: SMD. Max reverse voltage: 30V. Threshold voltage: 450mV. Driving current: 100mA. Reaction time: 4ns. Semiconductor structure: diode. Pulse current max.: 750mA. Conduction voltage (threshold voltage): 1V

Cj: 5pF. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Switching Schottky diode. Forward current (AV): 0.1A. IFSM: 0.75A. MRI (max): 100mA. MRI (min): 500nA. Marking on the case: DB1. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23L. Operating temperature: -60...+150°C. Threshold voltage Vf (max): 0.45V. Forward voltage Vf (min): 0.26V. VRRM: 30 v. Quantity per case: 2. Number of terminals: 3. Dielectric structure: common anode. Spec info: IFSM--750mA t=10ms

Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed switching diode. Forward current (AV): 215mA. IFSM: 1A. MRI (max): 0.5uA. MRI (min): 30nA. Marking on the case: A6W. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -40...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. VRRM: 100V. Spec info: IFSM--1A (T=1ms), 4A (T=1us)

Cj: 2pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 6 ns. Semiconductor material: silicon. Function: switching diode. Forward current (AV): 200mA. IFSM: 500mA. Note: screen printing/SMD code A6s, A6t. MRI (max): 50uA. MRI (min): 1uA. Marking on the case: A6s. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): 318–08, SOT–23 (TO–236AB). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 715mV. VRRM: 75V

Cj: 5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 50 ns. Semiconductor material: silicon. Function: High Voltage Switching Diode. Forward current (AV): 200mA. IFSM: 625mA. Note: screen printing/SMD code JS. MRI (max): 100uA. MRI (min): 0.1uA. Marking on the case: JS. Number of terminals: 3. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 1V. VRRM: 250V. Spec info: IFSM--t=1µs 9A, t=100µs 3A, t=10ms 1.7A

Cj: 1.5pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: High-speed diode. Production date: 2014/22. Forward current (AV): 0.5A. IFSM: 1A. Marking on the case: A6. Number of terminals: 2. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOD-323. Housing (according to data sheet): SOD-323. Operating temperature: -65...+150°C. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 85V. Spec info: IFSM--4A(t=1us), 1A(t=1ms)

Cj: 3pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Semiconductor material: silicon. Forward current (AV): 0.2A. IFSM: 2A. MRI (max): 0.5uA. MRI (min): 1nA. Number of terminals: 2. Temperature: +175°C. RoHS: yes. Assembly/installation: PCB through-hole mounting. Housing: DO-35 ( SOD27 ). Housing (according to data sheet): DO-35. Threshold voltage Vf (max): 1V. VRRM: 70V. Spec info: IFSM--2Ap, t=1µs

Cj: 5pF. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 5 ns. Semiconductor material: Sb. Function: Schottky diode. Surface mount. Forward current (AV): 0.2A. IFSM: 0.6A. Marking on the case: 43. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Operating temperature: -55...+150°C. Threshold voltage Vf (max): 1V. Forward voltage Vf (min): 0.38V. VRRM: 40V. Number of terminals: 3. Quantity per case: 1. Spec info: IFSM--600mA t=1s