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BAV199

BAV199
[TITLE]
[TITLE]
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Quantity (Set of 10) excl. VAT VAT incl.
1 - 1 1.00$ 1.00$
2 - 2 0.95$ 0.95$
3 - 4 0.90$ 0.90$
5 - 9 0.88$ 0.88$
10 - 24 0.85$ 0.85$
25 - 49 0.74$ 0.74$
50 - 787 0.70$ 0.70$
Quantity (Set of 10) U.P
1 - 1 1.00$ 1.00$
2 - 2 0.95$ 0.95$
3 - 4 0.90$ 0.90$
5 - 9 0.88$ 0.88$
10 - 24 0.85$ 0.85$
25 - 49 0.74$ 0.74$
50 - 787 0.70$ 0.70$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 7862
Set of 10

BAV199. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). VRRM: 85V. Forward current (AV): 200mA. IFSM: 500mA. RoHS: yes. Spec info: IFSM--4.5A (tp=1us), 0.5A (tp=1s). Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.9V. Cj: 2pF. Quantity per case: 2. Dielectric structure: Common anode-cathode (midpoint). Trr Diode (Min.): 0.6us. Semiconductor material: silicon. Function: dual low-leakage diode. Production date: 2014/49. MRI (max): 80nA. MRI (min): 5nA. Marking on the case: JYs. Number of terminals: 3. Temperature: +150°C. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 12/08/2025, 14:08.

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