Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.45$ | 0.45$ |
2 - 2 | 0.42$ | 0.42$ |
3 - 4 | 0.40$ | 0.40$ |
5 - 9 | 0.38$ | 0.38$ |
10 - 24 | 0.36$ | 0.36$ |
25 - 49 | 0.33$ | 0.33$ |
50 - 405 | 0.31$ | 0.31$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.45$ | 0.45$ |
2 - 2 | 0.42$ | 0.42$ |
3 - 4 | 0.40$ | 0.40$ |
5 - 9 | 0.38$ | 0.38$ |
10 - 24 | 0.36$ | 0.36$ |
25 - 49 | 0.33$ | 0.33$ |
50 - 405 | 0.31$ | 0.31$ |
BAW56W. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Forward current (AV): 200mA. IFSM: 1A. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Assembly/installation: surface-mounted component (SMD). Housing: SOT-323. Housing (according to data sheet): SOT323. Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. VRRM: 85V. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Quantity in stock updated on 25/12/2024, 04:25.
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