BAW56W

Quantity (Set of 10)	excl. VAT	VAT incl.
1 - 1	0.45$	0.45$
2 - 2	0.42$	0.42$
3 - 4	0.40$	0.40$
5 - 9	0.39$	0.39$
10 - 24	0.38$	0.38$
25 - 49	0.36$	0.36$
50 - 402	0.34$	0.34$

Quantity (Set of 10)	U.P
1 - 1	0.45$	0.45$
2 - 2	0.42$	0.42$
3 - 4	0.40$	0.40$
5 - 9	0.39$	0.39$
10 - 24	0.38$	0.38$
25 - 49	0.36$	0.36$
50 - 402	0.34$	0.34$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 4015

Set of 10

BAW56W. Forward current (AV): 200mA. IFSM: 1A. Housing: SOT-323. Housing (according to data sheet): SOT323. VRRM: 85V. RoHS: yes. Cj: 2pF. Quantity per case: 2. Dielectric structure: common anode. Trr Diode (Min.): 4 ns. Semiconductor material: silicon. Function: Ultra High Speed Switching. Note: screen printing/SMD code A1. MRI (max): 50uA. MRI (min): 0.15uA. Marking on the case: A1. Number of terminals: 3. Temperature: +150°C. Spec info: Ifsm--4.5A t=1us, 1A t=1ms. Assembly/installation: surface-mounted component (SMD). Threshold voltage Vf (max): 1.25V. Forward voltage Vf (min): 0.715V. Original product from manufacturer Nxp. Quantity in stock updated on 15/06/2025, 13:25.

Technical documentation

Information and technical help

By phone :

By email

Terms of Sales

Payment and delivery

Delivery in 2-3 days, with postal tracking!